Tree-Like Features Formed on Photoelectrochemically etched n-GaN surfaces ―Revelation of threading dislocations in GaN―

Material type: 文書・図像類

Author: YAMAMOTO, Akioほか

Publisher: The Institute of Pure and Applied Physics

Publication date: 2000-11-30

Material Format: Digital

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Note (General)：: Electrochemical etching behavior of n-type GaN films grown on sapphire has been studied under UV (λ=325 nm) light illumination. As the cases for photo...

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Material Type: 文書・図像類
Title: Tree-Like Features Formed on Photoelectrochemically etched n-GaN surfaces ―Revelation of threading dislocations in GaN―
Author/Editor: YAMAMOTO, Akio
AZUMA, Katsuhiko
YASUDA, Tomomi
HASHIMOTO, Akihiro
Author Heading: YAMAMOTO, Akio
AZUMA, Katsuhiko
YASUDA, Tomomi
HASHIMOTO, Akihiro
Publication, Distribution, etc.: The Institute of Pure and Applied Physics
Publication Date: 2000-11-30
Publication Date (W3CDTF): 2000-11-30
Periodical title: Proceedings of International Workshop on Nitride Semiconductors
Pages: 778-781
Text Language Code: eng
Subject Heading: GaN
photoelectrochemical etching
detection of dislocations
current density
tree-like feature
Target Audience: 一般
Note (General): Electrochemical etching behavior of n-type GaN films grown on sapphire has been studied under UV (λ=325 nm) light illumination. As the cases for photoelectrochemical etching of n-type GaAs and InP, three different features appear on etched n-GaN surfaces depending on current density for etching; a high density (10^10 cm^<-2>) of tree-like protrusions at a lower c-urrent density, a relatively flat surface at an intermediate current density, and peeling of the film from the substrate at a higher current density. From the shape and the density of tree-like protrusions, in addition to the analogy of these results with those for n-type GaAs and InP, it is reasonable to conclude that tree-like protrusions formed at a low current density are due to threading dislocations involved in n-GaN films. Thus, the photoelectrochemical etching is found to become a convenient method to detect dislocations in n-type III nitride materials.
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ