タイトル（掲載誌）Proceedings of International Workshop on Nitride Semiconductors
一般注記Electrochemical etching behavior of n-type GaN films grown on sapphire has been studied under UV (λ=325 nm) light illumination. As the cases for photoelectrochemical etching of n-type GaAs and InP, three different features appear on etched n-GaN surfaces depending on current density for etching; a high density (10^10 cm^<-2>) of tree-like protrusions at a lower c-urrent density, a relatively flat surface at an intermediate current density, and peeling of the film from the substrate at a higher current density. From the shape and the density of tree-like protrusions, in addition to the analogy of these results with those for n-type GaAs and InP, it is reasonable to conclude that tree-like protrusions formed at a low current density are due to threading dislocations involved in n-GaN films. Thus, the photoelectrochemical etching is found to become a convenient method to detect dislocations in n-type III nitride materials.
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）