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Preparation of InGaAs starting materials having the gradient InAs concentration

Preparation of InGaAs starting materials having the gradient InAs concentration
Digital文書・図像類
龍見, 雅美, 加藤, 浩和, 木下, 恭一, Tatsumi, Masami, Kato, Hirokazu, Kinoshita, Kyoichi宇宙開発事業団2000-09-29NASDA Technical Memorandump.55-59
Other Libraries in Japan
  • Subject Heading...n組成 成長実験 微視的評価 starting material directional solidification me...
  • Note (General)...示唆していた。 InGaAs starting materials having gradient InAs concent...

Analysis of compositional fraction in polycrystalline In(x)Ga(1-x)As using Raman scattering

Analysis of compositional fraction in polycrystalline In(x)Ga(1-x)As using Raman scattering
Digital文書・図像類
Verma, P., 山田, 正良, 龍見, 雅美, 加藤, 浩和, 木下, 恭一, Yamada, Masayoshi, Tatsumi, Masami, Kato, Hirokazu, Kinoshita, Kyoichi宇宙開発事業団2000-09-29NASDA Technical Memorandump.77-81
Other Libraries in Japan
  • Subject Heading...strate crystal starting material Raman scattering nondestructi...
  • Note (General)...hoose a proper starting material in the growth ......ed that if the starting material is polycrystal...... analyze these starting materials, especially, ......olycrystalline starting materials are presented. Compositional...

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