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Analysis of compositional fraction in polycrystalline In(x)Ga(1-x)As using Raman scattering

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Verma, P., 山田, 正良, 龍見, 雅美, 加藤, 浩和, 木下, 恭一, Yamada, Masayoshi, Tatsumi, Masami, Kato, Hirokazu, Kinoshita, Kyoichi宇宙開発事業団2000-09-29NASDA Technical Memorandump.77-81

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Subject Heading...ctronic device substrate crystal starting material Raman scatt...
Note (General)...to grow InGaAS substrate crystal with a spatial......geneous InGaAS substrate crystal can be grown. It is important...

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