木下, 恭一, 緒方, 康行, 越川, 尚清, 足立, 聡, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 杉木, 喜洋, 前川, 透, 依田, 真一, Kinoshita, Kyoichi, Ogata, Yasuyuki, Koshikawa, Naokiyo, Adachi, Satoshi, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Sugiki, Yoshihiro, Maekawa, Toru, Yoda, Shinichi宇宙開発事業団2003-08-29宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.19-26
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- Note (General)...r avoiding the constitutional supercooling in the crystal growth of In(x)Ga(1-x)As from its melt has been invest...