Constitutional supercooling in the crystal growth of In(x)Ga(1-x)As

Material type: 文書・図像類

Author: 木下, 恭一ほか

Publisher: 宇宙開発事業団

Publication date: 2003-08-29

Material Format: Digital

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Note (General)：: The critical freezing rate for avoiding the constitutional supercooling in the crystal growth of In(x)Ga(1-x)As from its melt has been investigated qu...

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Material Type: 文書・図像類
Title: Constitutional supercooling in the crystal growth of In(x)Ga(1-x)As
Author/Editor: 木下, 恭一
緒方, 康行
越川, 尚清
足立, 聡
岩井, 正行
鶴, 哲也
村松, 祐治
杉木, 喜洋
前川, 透
依田, 真一
Kinoshita, Kyoichi
Ogata, Yasuyuki
Koshikawa, Naokiyo
Adachi, Satoshi
Iwai, Masayuki
Tsuru, Tetsuya
Muramatsu, Yuji
Sugiki, Yoshihiro
Maekawa, Toru
Yoda, Shinichi
Author Heading: 木下, 恭一
緒方, 康行
越川, 尚清
足立, 聡
岩井, 正行
鶴, 哲也
村松, 祐治
杉木, 喜洋
前川, 透
依田, 真一
Kinoshita, Kyoichi
Ogata, Yasuyuki
Koshikawa, Naokiyo
Adachi, Satoshi
Iwai, Masayuki
Tsuru, Tetsuya
Muramatsu, Yuji
Sugiki, Yoshihiro
Maekawa, Toru
Yoda, Shinichi
Publication, Distribution, etc.: 宇宙開発事業団
Publication Date: 2003-08-29
Publication Date (W3CDTF): 2003-08-29
Alternative Title: In(x)Ga(1-x)As結晶成長における組性過冷却
Periodical title: 宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals
Pages: 19-26
ISSN (Periodical Title): ISSN : 1345-7888
Text Language Code: eng
Subject Heading: 結晶成長
TLZ法
In(x)Ga(1-x)As
過冷却
凍結
温度勾配
対流
メルト
crystal growth
TLZ method
supercooling
freezing
temperature gradient
convection
melt
Target Audience: 一般
Note (General): The critical freezing rate for avoiding the constitutional supercooling in the crystal growth of In(x)Ga(1-x)As from its melt has been investigated quantitatively and it is found that the critical freezing rate is between 0.25 and 0.28 mm/h at a temperature gradient in the melt of 10 C/cm when the convection is suppressed. Since the critical freezing rate that is calculated by the criteria reported by Tiller et al. in the diffusion limited growth is 0.22 mm/h at 10 C/cm, it can be said that tolerance for the constitutional supercooling exists. When convection in the melt existed, the critical freezing rate for avoiding the constitutional supercooling was reduced below the Tiller's criteria. Local inhomogeneity in the melt caused by convection might increase the local constitutional supercooling even at lower growth rate. The quantitative study on the effect of convection for the constitutional supercooling in a semiconductor crystal growth is the first time.
資料番号: AA0046981002
レポート番号: NASDA-TMR-030006E
Access Restrictions: 限定公開
Periodical Title (NCID): AN00364784
https://ci.nii.ac.jp/ncid/AN00364784
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ