Constitutional supercooling in the crystal growth of In(x)Ga(1-x)As

• 資料種別: 文書・図像類
• タイトル: Constitutional supercooling in the crystal growth of In(x)Ga(1-x)As
• 著者・編者: 木下, 恭一; 緒方, 康行; 越川, 尚清; 足立, 聡; 岩井, 正行; 鶴, 哲也; 村松, 祐治; 杉木, 喜洋; 前川, 透; 依田, 真一; Kinoshita, Kyoichi; Ogata, Yasuyuki; Koshikawa, Naokiyo; Adachi, Satoshi; Iwai, Masayuki; Tsuru, Tetsuya; Muramatsu, Yuji; Sugiki, Yoshihiro; Maekawa, Toru; Yoda, Shinichi
• 著者標目: 木下, 恭一; 緒方, 康行; 越川, 尚清; 足立, 聡; 岩井, 正行; 鶴, 哲也; 村松, 祐治; 杉木, 喜洋; 前川, 透; 依田, 真一; Kinoshita, Kyoichi; Ogata, Yasuyuki; Koshikawa, Naokiyo; Adachi, Satoshi; Iwai, Masayuki; Tsuru, Tetsuya; Muramatsu, Yuji; Sugiki, Yoshihiro; Maekawa, Toru; Yoda, Shinichi
• 出版事項: 宇宙開発事業団
• 出版年月日等: 2003-08-29
• 出版年（W3CDTF）: 2003-08-29
• 並列タイトル等: In(x)Ga(1-x)As結晶成長における組性過冷却
• タイトル（掲載誌）: 宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals
• 掲載ページ: 19-26
• ISSN（掲載誌）: ISSN : 1345-7888
• 本文の言語コード: eng
• 件名標目: 結晶成長; TLZ法; In(x)Ga(1-x)As; 過冷却; 凍結; 温度勾配; 対流; メルト; crystal growth; TLZ method; supercooling; freezing; temperature gradient; convection; melt
• 対象利用者: 一般
• 一般注記: The critical freezing rate for avoiding the constitutional supercooling in the crystal growth of In(x)Ga(1-x)As from its melt has been investigated quantitatively and it is found that the critical freezing rate is between 0.25 and 0.28 mm/h at a temperature gradient in the melt of 10 C/cm when the convection is suppressed. Since the critical freezing rate that is calculated by the criteria reported by Tiller et al. in the diffusion limited growth is 0.22 mm/h at 10 C/cm, it can be said that tolerance for the constitutional supercooling exists. When convection in the melt existed, the critical freezing rate for avoiding the constitutional supercooling was reduced below the Tiller's criteria. Local inhomogeneity in the melt caused by convection might increase the local constitutional supercooling even at lower growth rate. The quantitative study on the effect of convection for the constitutional supercooling in a semiconductor crystal growth is the first time.; 資料番号: AA0046981002; レポート番号: NASDA-TMR-030006E
• 一次資料へのリンクURL: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42958&item_no=1&attribute_id=31&file_no=1
• オンライン閲覧公開範囲: 限定公開
• 連携機関・データベース: 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• 提供元機関・データベース: 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ