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Metal-organic vapor-phase epitaxial growth of InGaN and InAlN for multi-junction tandem solar cells

Metal-organic vapor-phase epitaxial growth of InGaN and InAlN for multi-junction tandem solar cells
デジタル文書・図像類
Yamamoto, A., Sugita, K., Bhuiyan, A. G., Hashimoto, A., Narita, N.2013-04Materials for Renewable and Sustainable Energy2 2
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Indium nitride (InN): A review on growth, characterization and properties

Indium nitride (InN): A review on growth, characterization and properties
デジタル文書・図像類
Bhuiyan, A.G., Hashimoto, A., Yamamoto, A.American Institute of Physics2003-09Journal of Applied Physics94 5p.2779-2808
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  • 著者標目Bhuiyan, A.G. Hashimoto, A. Yamamoto, A.

Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy

Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
デジタル文書・図像類
Bhuiyan, A.G., Sugita, K., Kasashima, K., Hashimoto, A., Yamamoto, A., Davydov, V.Yu.American Institute of Physics2003Applied physics letters83p.4788-4790
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  • 著者標目Bhuiyan, A.G. Sugita, K. Kasashima, K. Hash...

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