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Applied physics letters

Applied physics letters
紙雑誌
American Institute of Physics<Z53-A362>
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Journal of applied physics & Applied physics letters : combined cumulative index, subject and author, 1962-1973.

Journal of applied physics & Applied physics letters : combined cumulative index, subject and author, 1962-1973.
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Nichigai Associates in association with the American Institute of Physicsc1974.<MC1-20>
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  • タイトル標目Journal of applied physics. Applied physics letters.

BAND GAP OF ALGAN ALLOYS;APPLIED PHYSICS LETTERS (SAND ; SAND-99-0274J)

BAND GAP OF ALGAN ALLOYS;APPLIED PHYSICS LETTERS (SAND ; SAND-99-0274J)
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R. M. BIEFELD//ET AL. (SANDIA NATIONAL LABORATORIES, ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1999.
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RETENTION AND SWITCHING KINETICS OF PROTONATED GATE FIELD EFFECT TRANSISTORS;APPLIED PHYSICS LETTERS (SAND ; SAND-2000-1307J)

RETENTION AND SWITCHING KINETICS OF PROTONATED GATE FIELD EFFECT TRANSISTORS;APPLIED PHYSICS LETTERS (SAND ; SAND-2000-1307J)
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SANDIA NATIONAL LABORATORIES (SNL), ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES)Sandia National Laboratories(Sandia National Laboratories)2000.
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STABILITY OF TRAPPED ELECTRONS IN SIO(2);APPLIED PHYSICS LETTERS (SAND ; SAND-99-0254J)

STABILITY OF TRAPPED ELECTRONS IN SIO(2);APPLIED PHYSICS LETTERS (SAND ; SAND-99-0254J)
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D. M. FLEETWOOD// ET AL. (SANDIA NATIONAL LABORATORIES, ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1999.
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INGAASN/ALGAAS PNP HETEROJUNCTION BIPOLAR TRANSISTOR;APPLIED PHYSICS LETTERS (SAND ; SAND-99-2841J)

INGAASN/ALGAAS PNP HETEROJUNCTION BIPOLAR TRANSISTOR;APPLIED PHYSICS LETTERS (SAND ; SAND-99-2841J)
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BACA// ET AL. (SANDIA NATIONAL LABORATORIES (SNL), ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1999.
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MINORITY CARRIER DIFFUSION, DEFECTS, AND LOCALIZATION IN INGAASN WITH 2.PERCENT. NITROGEN;APPLIED PHYSICS LETTERS (SAND ; SAND-2000-1115J)

MINORITY CARRIER DIFFUSION, DEFECTS, AND LOCALIZATION IN INGAASN WITH 2.PERCENT. NITROGEN;APPLIED PHYSICS LETTERS (SAND ; SAND-2000-1115J)
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SANDIA NATIONAL LABORATORIES (SNL), ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES)Sandia National Laboratories(Sandia National Laboratories)2000.
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GROWTH AND FABRICATION OF GAN/ALGAN HETEROJUNCTION BIPOLAR TRANSISTOR;APPLIED PHYSICS LETTERS (SAND ; SAND-99-0612J)

GROWTH AND FABRICATION OF GAN/ALGAN HETEROJUNCTION BIPOLAR TRANSISTOR;APPLIED PHYSICS LETTERS (SAND ; SAND-99-0612J)
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SANDIA NATIONAL LABORATORIES (SNL), ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES)Sandia National Laboratories(Sandia National Laboratories)1999.
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DEEP LEVELS IN P-TYPE INGAASN LATTICE MATCHED TO GAAS;APPLIED PHYSICS LETTERS (SAND ; SAND-99-0529J)

DEEP LEVELS IN P-TYPE INGAASN LATTICE MATCHED TO GAAS;APPLIED PHYSICS LETTERS (SAND ; SAND-99-0529J)
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A. A. ALLERMAN// ET AL. (SANDIA NATIONAL LABORATORIES, ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES))Sandia National Lab.1999.
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FILAMENTATION AND FUNDAMENTAL-MODE OPERATION IN INGAN QUANTUM WELL LASERS;APPLIED PHYSICS LETTERS (SAND ; SAND-99-3109J)

FILAMENTATION AND FUNDAMENTAL-MODE OPERATION IN INGAN QUANTUM WELL LASERS;APPLIED PHYSICS LETTERS (SAND ; SAND-99-3109J)
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SANDIA NATIONAL LABORATORIES (SNL), ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES)Sandia National Laboratories(Sandia National Laboratories)1999.
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QUANTUM WELL WIDTH DEPENDENCE OF THRESHOLD CURRENT DENSITY IN INGAN LASERS;APPLIED PHYSICS LETTERS (SAND ; SAND-99-0613J)

QUANTUM WELL WIDTH DEPENDENCE OF THRESHOLD CURRENT DENSITY IN INGAN LASERS;APPLIED PHYSICS LETTERS (SAND ; SAND-99-0613J)
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H. AMANO// ET AL. (SANDIA NATIONAL LABORATORIES, ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1999.
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DEPTH AND THERMAL STABILITY OF DRY ETCH DAMAGE IN GAN SCHOTTKY DIODES; APPLIED PHYSICS LETTERS (SAND ; SAND-99-1683J)

DEPTH AND THERMAL STABILITY OF DRY ETCH DAMAGE IN GAN SCHOTTKY DIODES; APPLIED PHYSICS LETTERS (SAND ; SAND-99-1683J)
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SANDIA NATIONAL LABORATORIES (SNL), ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES)Sandia National Laboratories(Sandia National Laboratories)1999.
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ORIGIN OF THE TIME-DEPENDENCE OF WET OXIDATION OF ALGAAS;APPLIED PHYSICS LETTERS (SAND ; SAND-99-0390J)

ORIGIN OF THE TIME-DEPENDENCE OF WET OXIDATION OF ALGAAS;APPLIED PHYSICS LETTERS (SAND ; SAND-99-0390J)
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A. A. ALLERMAN// ET AL. (SANDIA NATIONAL LABORATORIES, ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES))Sandia National Lab.1999.
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UNIPOLAR COMPLEMENTARY CIRCUITS USING DOUBLE ELECTRON LAYER TUNNELING TANSISTORS;APPLIED PHYSICS LETTERS (SAND ; SAND-98-2354J)

UNIPOLAR COMPLEMENTARY CIRCUITS USING DOUBLE ELECTRON LAYER TUNNELING TANSISTORS;APPLIED PHYSICS LETTERS (SAND ; SAND-98-2354J)
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SANDIA NATIONAL LABORATORIES, ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES)Sandia National Laboratories(Sandia National Laboratories)1998.
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GAN STRESS EVOLUTION DURING METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; APPLIED PHYSICS LETTERS (SAND ; SAND-98-2299J)

GAN STRESS EVOLUTION DURING METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; APPLIED PHYSICS LETTERS (SAND ; SAND-98-2299J)
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H. AMANO//ET AL. (SANDIA NATIONAL LABORATORIES, ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1998.
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INGAASN SOLAR CELLS WITH 1.0EV BANDGAP, LATTICE MATCHED TO GAAS;APPLIED PHYSICS LETTERS (SAND ; SAND-98-2631J)

INGAASN SOLAR CELLS WITH 1.0EV BANDGAP, LATTICE MATCHED TO GAAS;APPLIED PHYSICS LETTERS (SAND ; SAND-98-2631J)
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SANDIA NATIONAL LABORATORIES, ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES)Sandia National Laboratories(Sandia National Laboratories)1998.
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PLASMA HEATING IN HIGHLY EXCITED GAN/ALGAN MULTIPLE QUANTUM WELLS; APPLIED PHYSICS LETTERS (SAND ; SAND-98-2258J)

PLASMA HEATING IN HIGHLY EXCITED GAN/ALGAN MULTIPLE QUANTUM WELLS; APPLIED PHYSICS LETTERS (SAND ; SAND-98-2258J)
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SANDIA NATIONAL LABORATORIES, ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES)Sandia National Laboratories(Sandia National Laboratories)1998.
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EFFECT OF TEMPERATURE ON GAGDO/GAN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS;APPLIED PHYSICS LETTERS (SAND ; SAND-98-2308J)

EFFECT OF TEMPERATURE ON GAGDO/GAN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS;APPLIED PHYSICS LETTERS (SAND ; SAND-98-2308J)
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SANDIA NATIONAL LABORATORIES, ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES)Sandia National Laboratories(Sandia National Laboratories)1998.
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THEORETICAL LIMIT TO THE LASER THRESHOLD CURRENT DENSITY IN AN INGAN QUANTUM WELL LASER;APPLIED PHYSICS LETTERS (SAND ; SAND-98-2259J)

THEORETICAL LIMIT TO THE LASER THRESHOLD CURRENT DENSITY IN AN INGAN QUANTUM WELL LASER;APPLIED PHYSICS LETTERS (SAND ; SAND-98-2259J)
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SANDIA NATIONAL LABORATORIES, ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES)Sandia National Laboratories(Sandia National Laboratories)1998.
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Terahertz emission from GaAs-AlGaAs core-shell nanowires on Si (100) substrate: effects of applied magnetic field and excitation wavelength

Terahertz emission from GaAs-AlGaAs core-shell nanowires on Si (100) substrate: effects of applied magnetic field and excitation wavelength
デジタル文書・図像類
Ibanes, Jasher John, Balgos, Ma. Herminia, Jaculbia, Rafael, Salvador, Arnel, Somintac, Armando, Estacio, Elmer, Que, Christopher T., Tsuzuki, Satoshi, Yamamoto, Kohji, Tani, Masahiko2013-02Applied Physics Letters102 6p.63101-
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