メタン/水素マイクロ波プラズマCVD法による純チタン基板上のナノダイヤモンド成膜

• 資料種別: 記事
• タイトル: メタン/水素マイクロ波プラズマCVD法による純チタン基板上のナノダイヤモンド成膜
• 著者・編者: Cheolmun Yim; 辛 道勲; 林 祐輔 他
• 著者標目: Cheolmun Yim; 辛 道勲; 林 祐輔
• タイトル（掲載誌）: 材料 / 日本材料学会 [編]
• 巻号年月日等（掲載誌）: 54(1) 2005.1
• 掲載巻: 54
• 掲載号: 1
• 掲載ページ: 73～78
• 掲載年月日（W3CDTF）: 2005-01
• ISSN（掲載誌）: 0514-5163
• ISSN-L（掲載誌）: 0514-5163
• 出版事項（掲載誌）: 京都 : 日本材料学会
• 出版地（国名コード）: JP
• 本文の言語コード: jpn
• 件名標目: Mircocrystalline diamond; Nanocrystalline diamond; Pure titanium substrate; Surface roughness; MPCVD
• NDLC: ZM16
• 対象利用者: 一般
• 所蔵機関: 国立国会図書館
• 請求記号: Z14-267
• 連携機関・データベース: 国立国会図書館 : 国立国会図書館雑誌記事索引; https://ndlsearch.ndl.go.jp
• 書誌ID（NDLBibID）: 7221016; http://id.ndl.go.jp/bib/7221016
• 整理区分コード: 632

• 要約等: In contrast on microcrystalline diamond film, nanocrystalline diamond film has a flat and smooth surface. Therefore, nanocrystalline diamond film is desirable in application field of tribology. In this study, the nanocrystalline diamond film and the microcrystalline diamond film were deposited on pure titanium using CH₄/H₂ MPCVD method. The diamond film deposition was carried out under the deposition temperature of approximately 1173K and the deposition pressure of 8.0kPa. CH₄ concentration was changed from 0.5mol% to 5mol%. The deposition time was changed from 4h to 12h. The diamond film surface was observed by scanning electron microscopy (SEM). In the laser Raman spectra, the sharp peak of sp³-bonded carbon was attributed to 1332cm^-1 at microcrystalline diamond films. The band near 1140cm^-1 was related to the feature of nanocrystalline diamond film. Diamond films were also analyzed using X-ray diffraction. It is confirmed from XRD profile that (111) and (220) exists in the nanocrystalline diamond film. Surface roughness of diamond films decreased with increasing CH₄ concentration. But, the surface roughness of diamond films was close to approximately 50nm when CH₄ concentration was changed from 2mol% to 5mol%. It was confirmed that the nanocrystalline diamond film can be deposited by CH₄/H₂ MPCVD method under CH₄ concentration from 2mol% to 5mol%.
• DOI: 10.2472/jsms.54.73
• オンライン閲覧公開範囲: インターネット公開
• 連携機関・データベース: 科学技術振興機構 : J-STAGE; http://www.jstage.jst.go.jp

• 要約等: In contrast on microcrystalline diamond film, nanocrystalline diamond film has a flat and smooth surface. Therefore, nanocrystalline diamond film is desirable in application field of tribology. In this study, the nanocrystalline diamond film and the microcrystalline diamond film were deposited on pure titanium using CH₄/H₂ MPCVD method. The diamond film deposition was carried out under the deposition temperature of approximately 1173K and the deposition pressure of 8.0kPa. CH₄ concentration was changed from 0.5mol% to 5mol%. The deposition time was changed from 4h to 12h. The diamond film surface was observed by scanning electron microscopy (SEM). In the laser Raman spectra, the sharp peak of sp³-bonded carbon was attributed to 1332cm^-1 at microcrystalline diamond films. The band near 1140cm^-1 was related to the feature of nanocrystalline diamond film. Diamond films were also analyzed using X-ray diffraction. It is confirmed from XRD profile that (111) and (220) exists in the nanocrystalline diamond film. Surface roughness of diamond films decreased with increasing CH₄ concentration. But, the surface roughness of diamond films was close to approximately 50nm when CH₄ concentration was changed from 2mol% to 5mol%. It was confirmed that the nanocrystalline diamond film can be deposited by CH₄/H₂ MPCVD method under CH₄ concentration from 2mol% to 5mol%.
• DOI: 10.2472/jsms.54.73; https://doi.org/10.2472/jsms.54.73
• 関連情報（URI）: http://id.ndl.go.jp/bib/7221016; https://ndlsearch.ndl.go.jp/books/R000000004-I7221016
• 参照: Roughness control of polycrystalline diamond films grown by bias-enhanced microwave plasma-assisted CVD; https://cir.nii.ac.jp/crid/1360292619413357056; Synthesis and tribological characteristics of nanocrystalline diamond film using CH4/H2 microwave plasmas; https://cir.nii.ac.jp/crid/1360292619503600256; Chemical vapor deposition diamond thin films growth on Ti6AL4V using the Surfatron system; https://cir.nii.ac.jp/crid/1360855568447444608; Interfacial structure, residual stress and adhesion of diamond coatings deposited on titanium; https://cir.nii.ac.jp/crid/1360855570565078912; Measurement of C2 radical density in microwave methane/hydrogen plasma used for nanocrystalline diamond film formation; https://cir.nii.ac.jp/crid/1361137043498745984; Formation and adhesion of hot filament CVD diamond films on titanium substrates; https://cir.nii.ac.jp/crid/1361137044838178560; Morphology variation of diamond with increasing pressure up to 400 torr during deposition using hot filament CVD; https://cir.nii.ac.jp/crid/1361418519877369344; Evidence for <i>trans</i>-polyacetylene in nanocrystalline diamond films from H–D isotropic substitution experiments; https://cir.nii.ac.jp/crid/1361418520527145728; Growth of nanocrystalline diamond films by biased enhanced microwave plasma chemical vapor deposition; https://cir.nii.ac.jp/crid/1362262944526137472; Formation and structure of a-C/nanodiamond composite films by prolonged bias enhanced nucleation; https://cir.nii.ac.jp/crid/1362262945237658624; Synthesis of nanocrystalline diamond films using microwave plasma CVD; https://cir.nii.ac.jp/crid/1362544419024035712; Temperature dependence of the growth rate for nanocrystalline diamond films deposited from an Ar/CH4 microwave plasma; https://cir.nii.ac.jp/crid/1362544419151239040; Influence of internal diffusion barriers on carbon diffusion in pure titanium and Ti–6Al–4V during diamond deposition; https://cir.nii.ac.jp/crid/1362825893374140416; Plasma-assisted chemical vapor deposition process for depositing smooth diamond coatings on titanium alloys at moderate temperature; https://cir.nii.ac.jp/crid/1362825893380085760; Microstructure and stress in nano-crystalline diamond films deposited by DC glow discharge CVD; https://cir.nii.ac.jp/crid/1363107368908539136; The role of hydrogen in vapor deposition of diamond; https://cir.nii.ac.jp/crid/1363107369430734464; Synchrotron radiation X-ray analysis of boron-doped diamond films grown by hot-filament assisted chemical vapor deposition; https://cir.nii.ac.jp/crid/1363107371329197056; Tribological properties of nanocrystalline diamond films; https://cir.nii.ac.jp/crid/1363388843746441344; Growth stages of chemical vapor deposited diamond on the titanium alloy Ti6Al-4V; https://cir.nii.ac.jp/crid/1363388845843517312; Substrate bias effect on the formation of nanocrystalline diamond films by microwave plasma-enhanced chemical vapor deposition; https://cir.nii.ac.jp/crid/1363670318965811456; Origin of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>1</mml:mn><mml:mn>1</mml:mn><mml:mn>5</mml:mn><mml:mn>0</mml:mn><mml:mo>−</mml:mo><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="normal">cm</mml:mi></mml:mrow><mml:mrow><mml:mi>−</mml:mi><mml:mn>1</mml:mn></mml:mrow></mml:msup></mml:mrow></mml:math>Raman mode in nanocrystalline diamond; https://cir.nii.ac.jp/crid/1363670319431671680; Polyacetylene in Diamond Films Evidenced by Surface Enhanced Raman Scattering; https://cir.nii.ac.jp/crid/1364233268328886784; The influence of diamond chemical vapour deposition coating parameters on the microstructure and properties of titanium substrates; https://cir.nii.ac.jp/crid/1364233270437140992; Low roughness diamond films produced at temperatures less than 600°C; https://cir.nii.ac.jp/crid/1364233271053186304
• 連携機関・データベース: 国立情報学研究所 : CiNii Research; https://cir.nii.ac.jp/
• 提供元機関・データベース: Japan Link Center; https://japanlinkcenter.org/top; 雑誌記事索引データベース; https://ndlsearch.ndl.go.jp; Crossref; https://www.crossref.org; CiNii Articles
• 書誌ID（NDLBibID）: 7221016; http://id.ndl.go.jp/bib/7221016
• NII論文ID: 110006266386