タイトル(掲載誌)Proceedings of International Workshop on Nitride Semiconductors
一般注記Single crystalline wurtzite InN films have been grown on GaP(111)B and InP(111)B substrates using MOCVD. To obtain the epitaxial layers of InN on the phosphide substrates the important point has been clarified clearly. Suppression of the substrate surface nitridation is found to be significant to obtain the single crystalline InN films on GaP(111)B and InP(111)B Substrates. Nitridation results the formation PN_x on both the substrate surfaces, which carries the tendency of grown InN films to become polycrystalline. Nitridation of InP(111)B surface happens considerably at a lower temperature than that of GaP(111)B. By suppressing the nitridation, single cystalline InN film with an excellent crystallinity and surface morphology can be grown on a GaP(111)B substrate at high temperature (600℃), where, nitridation of the substrate surface was suppressed by growing a low temperature initial layer of InN. Ctystalline quality of InN on InP(111)B can also be improved by reducing the substrate surface nitridation.
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連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)