Significance of the Suppression of Substrate Surface Nitridation for Epitaxial Growth of Wurtzite InN on GaP(111) and InP(111) Substrates

Material type: 文書・図像類

Author: BHUIYAN, Ashraful Ghaniほか

Publisher: The Institute of Pure and Applied Physics

Publication date: 2000-11-30

Material Format: Digital

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Note (General)：: Single crystalline wurtzite InN films have been grown on GaP(111)B and InP(111)B substrates using MOCVD. To obtain the epitaxial layers of InN on the ...

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Material Type: 文書・図像類
Title: Significance of the Suppression of Substrate Surface Nitridation for Epitaxial Growth of Wurtzite InN on GaP(111) and InP(111) Substrates
Author/Editor: BHUIYAN, Ashraful Ghani
YAMAMOTO, Akio
HASHIMOTO, Akihiro
ISHIGAMI, Ryuya
Author Heading: BHUIYAN, Ashraful Ghani
YAMAMOTO, Akio
HASHIMOTO, Akihiro
ISHIGAMI, Ryuya
Publication, Distribution, etc.: The Institute of Pure and Applied Physics
Publication Date: 2000-11-30
Publication Date (W3CDTF): 2000-11-30
Periodical title: Proceedings of International Workshop on Nitride Semiconductors
Pages: 343-346
Text Language Code: eng
Subject Heading: InN
GaP(111)B
InP(111)B
MOCVD
Nitridation
XPS
RHEED
AFM
Target Audience: 一般
Note (General): Single crystalline wurtzite InN films have been grown on GaP(111)B and InP(111)B substrates using MOCVD. To obtain the epitaxial layers of InN on the phosphide substrates the important point has been clarified clearly. Suppression of the substrate surface nitridation is found to be significant to obtain the single crystalline InN films on GaP(111)B and InP(111)B Substrates. Nitridation results the formation PN_x on both the substrate surfaces, which carries the tendency of grown InN films to become polycrystalline. Nitridation of InP(111)B surface happens considerably at a lower temperature than that of GaP(111)B. By suppressing the nitridation, single cystalline InN film with an excellent crystallinity and surface morphology can be grown on a GaP(111)B substrate at high temperature (600℃), where, nitridation of the substrate surface was suppressed by growing a low temperature initial layer of InN. Ctystalline quality of InN on InP(111)B can also be improved by reducing the substrate surface nitridation.
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ