タイトル(掲載誌)Proceedings of International Workshop on Nitride Semiconductors
一般注記Growth rate as a function of growth temperature has been studied for MOVPE InN. In the temperature range of 500-600℃, growth rate is increased with increasing growth temperature while TMI supply is constant, and shows a saturation against the increase in TMI supply. At 650℃, on the other band, such a saturation is not seen for TMI supply up to 28 μmol/min. As a result of this, a growth rate as high as 0.8 μm/h is obtained at 650℃. Activation energy (~0.76 eV) for saturated growth rate is in good agreement with that (0.79 eV) reported for the thermal decomposition of NH_3 showing that the growth-rate is dominated by the active nitrogen supply and its saturation is due to the deficiency of active nitrogen. At around 650℃, growth rate is lower than that expected from the values at lower temperatures. This seems to be due to the decomposition of grown InN.
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)