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Growth Rate and Its Limiting Process for Metalorganic Vapor Phase Epitaxial InN

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Growth Rate and Its Limiting Process for Metalorganic Vapor Phase Epitaxial InN

Material type
文書・図像類
Author
ADACHI, Masatoほか
Publisher
The Institute of Pure and Applied Physics
Publication date
2000-11-30
Material Format
Digital
Capacity, size, etc.
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Notes on use

Note (General):

Growth rate as a function of growth temperature has been studied for MOVPE InN. In the temperature range of 500-600℃, growth rate is increased with in...

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  • University of Fukui Academic Repository

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Digital

Material Type
文書・図像類
Author/Editor
ADACHI, Masato
MURAKAMI, Yasuyuki
HASHIMOTO, Akihiro
YAMAMOTO, Akio
Publication, Distribution, etc.
Publication Date
2000-11-30
Publication Date (W3CDTF)
2000-11-30
Periodical title
Proceedings of International Workshop on Nitride Semiconductors
Pages
339-342
Text Language Code
eng