Growth Rate and Its Limiting Process for Metalorganic Vapor Phase Epitaxial InN

Material type: 文書・図像類

Author: ADACHI, Masatoほか

Publisher: The Institute of Pure and Applied Physics

Publication date: 2000-11-30

Material Format: Digital

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Note (General)：: Growth rate as a function of growth temperature has been studied for MOVPE InN. In the temperature range of 500-600℃, growth rate is increased with in...

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Material Type: 文書・図像類
Title: Growth Rate and Its Limiting Process for Metalorganic Vapor Phase Epitaxial InN
Author/Editor: ADACHI, Masato
MURAKAMI, Yasuyuki
HASHIMOTO, Akihiro
YAMAMOTO, Akio
Author Heading: ADACHI, Masato
MURAKAMI, Yasuyuki
HASHIMOTO, Akihiro
YAMAMOTO, Akio
Publication, Distribution, etc.: The Institute of Pure and Applied Physics
Publication Date: 2000-11-30
Publication Date (W3CDTF): 2000-11-30
Periodical title: Proceedings of International Workshop on Nitride Semiconductors
Pages: 339-342
Text Language Code: eng
Subject Heading: InN
MOVPE
growth rate
NH_3
decomposition
limiting process
Target Audience: 一般
Note (General): Growth rate as a function of growth temperature has been studied for MOVPE InN. In the temperature range of 500-600℃, growth rate is increased with increasing growth temperature while TMI supply is constant, and shows a saturation against the increase in TMI supply. At 650℃, on the other band, such a saturation is not seen for TMI supply up to 28 μmol/min. As a result of this, a growth rate as high as 0.8 μm/h is obtained at 650℃. Activation energy (~0.76 eV) for saturated growth rate is in good agreement with that (0.79 eV) reported for the thermal decomposition of NH_3 showing that the growth-rate is dominated by the active nitrogen supply and its saturation is due to the deficiency of active nitrogen. At around 650℃, growth rate is lower than that expected from the values at lower temperatures. This seems to be due to the decomposition of grown InN.
Source: https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22197&item_no=1&attribute_id=22&file_no=1
https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22197&item_no=1&attribute_id=22&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ