タイトル（掲載誌）Physical Review - Section B - Condensed Matter
一般注記Highly excited photoluminescence of CsPbCl3 , which is known to be one of the most photoluminescent semiconductors, has been measured for thin films prepared by crystallization from the amorphous phase into microcrystalline/polycrystalline states. With the increase of excitation intensity, the microcrystalline state shows successive jumps of the dominant emission band, from a free-exciton band to its phonon replica and finally to a lowest-energy band originating from exciton-exciton inelastic collision. For the exciton-exciton porcess stimulated emission occurs at very low threshold excitation intensities of the order of 10 kW〓cm2 at 77 K . At higher excitation intensities above 50 kW〓cm2 , single-path-light-amplification stimulated emission across the film thickness is observed suggesting a very large optical gain. The large-gain mechanism is attributable to giant oscillator strength effect characteristic of excitonic superradiance recently reported for films prepared in the same way.
著作権情報〓 2004 American Institute of Physics
関連情報（DOI）10.1103/PhysRevB.70.20532
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）