Photoluminescence and stimulated emission from microcrystalline CsPbCl3 films prepared by amorphous-to-crystalline transformation

Material type: 文書・図像類

Author: KONDO, Sほか

Publisher: American Institute of Physics

Publication date: 2004-11

Material Format: Digital

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Note (General)：: Highly excited photoluminescence of CsPbCl3 , which is known to be one of the most photoluminescent semiconductors, has been measured for thin films p...

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Material Type: 文書・図像類
Title: Photoluminescence and stimulated emission from microcrystalline CsPbCl3 films prepared by amorphous-to-crystalline transformation
Author/Editor: KONDO, S
SUZUKI, K
SAITO, T
ASADA, H
NAKAGAWA, H
Author Heading: KONDO, S
SUZUKI, K
SAITO, T
ASADA, H
NAKAGAWA, H
Publication, Distribution, etc.: American Institute of Physics
Publication Date: 2004-11
Publication Date (W3CDTF): 2004-11
Periodical title: Physical Review - Section B - Condensed Matter
No. or year of volume/issue: 70
Volume: 70
Pages: 205322-1-205322-7
ISSN (Periodical Title): ISSN : 1098-0121
Text Language Code: eng
Target Audience: 一般
Note (General): Highly excited photoluminescence of CsPbCl3 , which is known to be one of the most photoluminescent semiconductors, has been measured for thin films prepared by crystallization from the amorphous phase into microcrystalline/polycrystalline states. With the increase of excitation intensity, the microcrystalline state shows successive jumps of the dominant emission band, from a free-exciton band to its phonon replica and finally to a lowest-energy band originating from exciton-exciton inelastic collision. For the exciton-exciton porcess stimulated emission occurs at very low threshold excitation intensities of the order of 10 kW〓cm2 at 77 K . At higher excitation intensities above 50 kW〓cm2 , single-path-light-amplification stimulated emission across the film thickness is observed suggesting a very large optical gain. The large-gain mechanism is attributable to giant oscillator strength effect characteristic of excitonic superradiance recently reported for films prepared in the same way.
Source: https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=23977&item_no=1&attribute_id=22&file_no=1
https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=23977&item_no=1&attribute_id=22&file_no=1
Access Restrictions: 限定公開
Rights (production): 〓 2004 American Institute of Physics
Related Material (DOI): 10.1103/PhysRevB.70.20532
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ