タイトル（掲載誌）Advanced Functional Materials
一般注記出版タイプ： NA
Very recently, electric-field-induced superconductivity in an insulator was realized by tuning charge carrier to a high density level (1 x 10<SUP>14</SUP>) cm<SUP>-2</SUP>). To increase the maximum attainable carrier density for electrostatic tuning of electronic states in semiconductor field-effect transistors is a hot issue but a big challenge. Here, ultrahigh density carrier accumulation is reported, in particular at low temperature, in a ZnO field-effect transistor gated by electric double layers of ionic liquid (IL). This transistor, called an electric double layer transistor (EDLT), is found to exhibit very high transconductance and an ultrahigh carrier density in a fast, reversible, and reproducible manner. The room temperature capacitance of EDLTs is found to be as large as 34 mu F cm<SUP>-2</SUP>, deduced from Hall-effect measurements, and is mainly responsible for the carrier density modulation in a very wide range. Importantly, the IL dielectric, with a supercooling property, is found to have charge-accumulation capability even at low temperatures, reaching an ultrahigh carrier density of 8 x 10<SUP>14</SUP> cm<SUP>-2</SUP> at 220 K and maintaining a density of 5.5 x 10<SUP>14</SUP> cm<SUP>-2</SUP> at 1.8 K. This high carrier density of EDLTs is of great importance not only in practical device applications but also in fundamental research; for example, in the search for novel electronic phenomena, such as superconductivity, in oxide systems.
identifier:oai:t2r2.star.titech.ac.jp:50110179
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
提供元機関・データベース東京科学大学 : 東京科学大学リサーチリポジトリ(T2R2)