High-density carrier accumulation in ZnO field-effect transistors gated by electric double layers of ionic liquids

Material type: 記事

Author: 袁, 洪涛ほか

Publisher: -

Publication date: 2009-04

Material Format: Paper

Journal name: Advanced Functional Materials 19 No. 7

Publication Page: p.1046-1053

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Note (General)：: 出版タイプ： NAVery recently, electric-field-induced superconductivity in an insulator was realized by tuning charge carrier to a high density level (1 x 10...

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Paper

Material Type: 記事
Title: High-density carrier accumulation in ZnO field-effect transistors gated by electric double layers of ionic liquids
Author/Editor: 袁, 洪涛
Yuan, Hongtao
下谷, 秀和
Shimotani, Hidekazu
塚崎, 敦
Tsukazaki, Atsushi
大友, 明
Ohtomo, Akira
川崎, 雅司
Kawasaki, Masashi
岩佐, 義宏
Iwasa, Yoshihiro
Author Heading: 袁, 洪涛
Yuan, Hongtao
下谷, 秀和
Shimotani, Hidekazu
塚崎, 敦
Tsukazaki, Atsushi
大友, 明
Ohtomo, Akira
川崎, 雅司
Kawasaki, Masashi
岩佐, 義宏
Iwasa, Yoshihiro
Publication Date: 2009-04
Publication Date (W3CDTF): 2009
Periodical title: Advanced Functional Materials
No. or year of volume/issue: 19 No. 7
Volume: 19
Issue: No. 7
Pages: 1046-1053
ISSN (Periodical Title): ISSN : 1616-301X
Target Audience: 一般
Note (General): 出版タイプ： NA
Very recently, electric-field-induced superconductivity in an insulator was realized by tuning charge carrier to a high density level (1 x 1014) cm-2). To increase the maximum attainable carrier density for electrostatic tuning of electronic states in semiconductor field-effect transistors is a hot issue but a big challenge. Here, ultrahigh density carrier accumulation is reported, in particular at low temperature, in a ZnO field-effect transistor gated by electric double layers of ionic liquid (IL). This transistor, called an electric double layer transistor (EDLT), is found to exhibit very high transconductance and an ultrahigh carrier density in a fast, reversible, and reproducible manner. The room temperature capacitance of EDLTs is found to be as large as 34 mu F cm-2, deduced from Hall-effect measurements, and is mainly responsible for the carrier density modulation in a very wide range. Importantly, the IL dielectric, with a supercooling property, is found to have charge-accumulation capability even at low temperatures, reaching an ultrahigh carrier density of 8 x 1014 cm-2 at 220 K and maintaining a density of 5.5 x 1014 cm-2 at 1.8 K. This high carrier density of EDLTs is of great importance not only in practical device applications but also in fundamental research; for example, in the search for novel electronic phenomena, such as superconductivity, in oxide systems.
identifier:oai:t2r2.star.titech.ac.jp:50110179
Related Material (DOI): 10.1002/adfm.200801633
https://doi.org/10.1002/adfm.200801633
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 東京科学大学 : 東京科学大学リサーチリポジトリ(T2R2)