Investigation on polycrystallization mechanism at initial interfaces in In(x)Ga(1-x)As (x is approximately 0.3) bulk crystals on lattice mismatched seeds

• 資料種別: 文書・図像類
• タイトル: Investigation on polycrystallization mechanism at initial interfaces in In(x)Ga(1-x)As (x is approximately 0.3) bulk crystals on lattice mismatched seeds
• 著者・編者: 宮田, 浩旭; 緒方, 康行; 足立, 聡; 鶴, 哲也; 村松, 祐治; 木下, 恭一; 小田原, 修; 依田, 眞一; Miyata, Hiroaki; Ogata, Yasuyuki; Adachi, Satoshi; Tsuru, Tetsuya; Muramatsu, Yuji; Kinoshita, Kyoichi; Odawara, Osamu; Yoda, Shinichi
• 著者標目: 宮田, 浩旭; 緒方, 康行; 足立, 聡; 鶴, 哲也; 村松, 祐治; 木下, 恭一; 小田原, 修; 依田, 眞一; Miyata, Hiroaki; Ogata, Yasuyuki; Adachi, Satoshi; Tsuru, Tetsuya; Muramatsu, Yuji; Kinoshita, Kyoichi; Odawara, Osamu; Yoda, Shinichi
• 出版事項: 宇宙航空研究開発機構
• 出版年月日等: 2006-03-31
• 出版年（W3CDTF）: 2006-03-31
• タイトル（掲載誌）: 宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals
• 巻号年月日等（掲載誌）: JAXA-SP-05-036E
• 掲載巻: JAXA-SP-05-036E
• 掲載ページ: 13-20
• ISSN（掲載誌）: ISSN : 1349-113X
• 本文の言語コード: eng
• 件名標目: 多結晶; InGaAs; 飽和溶融帯移動法; 光通信; フォトルミネッセンス; 結晶成長; 単結晶; 多結晶化; 結晶格子; polycrystal; traveling liquidus zone method; optical communication; photoluminescence; crystal growth; single crystal; polycrystallization; crystal lattice
• 対象利用者: 一般
• 一般注記: In the growth of In(0.3)Ga(0.7)As single crystals, polycrystallization at the initial interface with lattice-mismatched seeds is a major problem because no homogeneous In(0.3)Ga(0.7)As seed crystals have been obtained and usually GaAs crystals are used as seeds. Hence, a mechanism of polycrystallization at the initial interface was investigated. In this paper, a local misfit stress at the interface is calculated. Then it is compared with the critical resolved shear stress (CRSS). It was determined that the polycrystallization at the initial interface is related to the magnitude of the misfit stress and to that of the CRSS. We discuss growth of larger In(0.3)Ga(0.7)As single crystals by avoiding the polycrystallization at the initial interface.; 資料番号: AA0049798003; レポート番号: JAXA-SP-05-036E
• 一次資料へのリンクURL: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=6091&item_no=1&attribute_id=31&file_no=1
• オンライン閲覧公開範囲: 限定公開
• 連携機関・データベース: 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• 提供元機関・データベース: 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ