Investigation on polycrystallization mechanism at initial interfaces in In(x)Ga(1-x)As (x is approximately 0.3) bulk crystals on lattice mismatched seeds

Material type: 文書・図像類

Author: 宮田, 浩旭ほか

Publisher: 宇宙航空研究開発機構

Publication date: 2006-03-31

Material Format: Digital

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Note (General)：: In the growth of In(0.3)Ga(0.7)As single crystals, polycrystallization at the initial interface with lattice-mismatched seeds is a major problem becau...

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Material Type: 文書・図像類
Title: Investigation on polycrystallization mechanism at initial interfaces in In(x)Ga(1-x)As (x is approximately 0.3) bulk crystals on lattice mismatched seeds
Author/Editor: 宮田, 浩旭
緒方, 康行
足立, 聡
鶴, 哲也
村松, 祐治
木下, 恭一
小田原, 修
依田, 眞一
Miyata, Hiroaki
Ogata, Yasuyuki
Adachi, Satoshi
Tsuru, Tetsuya
Muramatsu, Yuji
Kinoshita, Kyoichi
Odawara, Osamu
Yoda, Shinichi
Author Heading: 宮田, 浩旭
緒方, 康行
足立, 聡
鶴, 哲也
村松, 祐治
木下, 恭一
小田原, 修
依田, 眞一
Miyata, Hiroaki
Ogata, Yasuyuki
Adachi, Satoshi
Tsuru, Tetsuya
Muramatsu, Yuji
Kinoshita, Kyoichi
Odawara, Osamu
Yoda, Shinichi
Publication, Distribution, etc.: 宇宙航空研究開発機構
Publication Date: 2006-03-31
Publication Date (W3CDTF): 2006-03-31
Periodical title: 宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals
No. or year of volume/issue: JAXA-SP-05-036E
Volume: JAXA-SP-05-036E
Pages: 13-20
ISSN (Periodical Title): ISSN : 1349-113X
Text Language Code: eng
Subject Heading: 多結晶
InGaAs
飽和溶融帯移動法
光通信
フォトルミネッセンス
結晶成長
単結晶
多結晶化
結晶格子
polycrystal
traveling liquidus zone method
optical communication
photoluminescence
crystal growth
single crystal
polycrystallization
crystal lattice
Target Audience: 一般
Note (General): In the growth of In(0.3)Ga(0.7)As single crystals, polycrystallization at the initial interface with lattice-mismatched seeds is a major problem because no homogeneous In(0.3)Ga(0.7)As seed crystals have been obtained and usually GaAs crystals are used as seeds. Hence, a mechanism of polycrystallization at the initial interface was investigated. In this paper, a local misfit stress at the interface is calculated. Then it is compared with the critical resolved shear stress (CRSS). It was determined that the polycrystallization at the initial interface is related to the magnitude of the misfit stress and to that of the CRSS. We discuss growth of larger In(0.3)Ga(0.7)As single crystals by avoiding the polycrystallization at the initial interface.
資料番号: AA0049798003
レポート番号: JAXA-SP-05-036E
Source: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=6091&item_no=1&attribute_id=31&file_no=1
https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=6091&item_no=1&attribute_id=31&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ