並列タイトル等Study on radiation hardness of III-V compound solar cells: Small lightweight electrical power system
タイトル（掲載誌）宇宙航空研究開発機構特別資料: 平成16年度総合技術研究本部宇宙領域宇宙科学研究本部合同研究成果報告書:人工衛星系基盤技術 = JAXA Special Publication: FY2004 Report of Joint Research Achievements of the Space Division of Institute of Aerospace Technology and Institute of Space and Astronautical Science: Basic Technologies of Satellite Systems
一般注記Triple-junction (3J) space solar cells were irradiated with 10 MeV protons at 175 K. The electrical performance of the 3J solar cells was measured in situ under AM0-light illuminated condition at low temperature. The electrical performance of the solar cells decreases with increasing proton fluence, and at a proton fluence of 1 x 10(exp 13)/sq cm, short-circuit current (Isc) and open-circuit voltage (Voc) become approximately 87 and 80 percent of the initial values, respectively, indicating higher radiation resistance compared to Si solar cells. No significant difference in the degradation behavior of the electrical performance is observed between low temperature and RT. The influences of light-illumination and current-injection on the electrical properties were studied at low temperature to minimize the thermal annealing effect. For AM0 light illumination, the change in the electrical properties of the 3J solar cells under AM0 illumination was investigated at 175 K. The electrical performance does not change by the illumination for 370 min. On the other hand, by current injection at 155 K, a significant recovery of the electrical performance of proton-irradiated 3J solar cells is observed. At current injection times of 4,500 sec, a 10 percent recovery of Isc and Voc to the values after irradiation for the fluence of 3 x 10(exp 13)/sq cm is observed.
資料番号: AA0049054018
レポート番号: JAXA-SP-05-008
一次資料へのリンクURLhttps://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=6274&item_no=1&attribute_id=31&file_no=1
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
提供元機関・データベース宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ