III-V族化合物太陽電池の耐放射線性に関する研究:小型軽量パワーシステム

• Material Type: 文書・図像類
• Title: III-V族化合物太陽電池の耐放射線性に関する研究:小型軽量パワーシステム
• Author/Editor: 今泉, 充; 住田, 泰史; 岐部, 公一; 森岡, 千晴; Imaizumi, Mitsuru; Sumita, Taishi; Kibe, Koichi; Morioka, Chiharu
• Author Heading: 今泉, 充; 住田, 泰史; 岐部, 公一; 森岡, 千晴; Imaizumi, Mitsuru; Sumita, Taishi; Kibe, Koichi; Morioka, Chiharu
• Publication, Distribution, etc.: 宇宙航空研究開発機構
• Publication Date: 2006-01-20
• Publication Date (W3CDTF): 2006-01-20
• Alternative Title: Study on radiation hardness of III-V compound solar cells: Small lightweight electrical power system
• Periodical title: 宇宙航空研究開発機構特別資料: 平成16年度総合技術研究本部宇宙領域宇宙科学研究本部合同研究成果報告書:人工衛星系基盤技術 = JAXA Special Publication: FY2004 Report of Joint Research Achievements of the Space Division of Institute of Aerospace Technology and Institute of Space and Astronautical Science: Basic Technologies of Satellite Systems
• No. or year of volume/issue: JAXA-SP-05-008
• Volume: JAXA-SP-05-008
• Pages: 89-92
• ISSN (Periodical Title): ISSN : 1349-113X
• Text Language Code: jpn
• Subject Heading: 3接合太陽電池; プロトン照射; 電気的性能; 性能試験; 陽子フルエンス; 焼鈍; 放射線損傷; 耐放射線性; 低温; triple-junction solar cell; proton irradiation; electrical performance; performance test; proton fluence; annealing; radiation damage; radiation hardness; low temperature
• Target Audience: 一般
• Note (General): Triple-junction (3J) space solar cells were irradiated with 10 MeV protons at 175 K. The electrical performance of the 3J solar cells was measured in situ under AM0-light illuminated condition at low temperature. The electrical performance of the solar cells decreases with increasing proton fluence, and at a proton fluence of 1 x 10(exp 13)/sq cm, short-circuit current (Isc) and open-circuit voltage (Voc) become approximately 87 and 80 percent of the initial values, respectively, indicating higher radiation resistance compared to Si solar cells. No significant difference in the degradation behavior of the electrical performance is observed between low temperature and RT. The influences of light-illumination and current-injection on the electrical properties were studied at low temperature to minimize the thermal annealing effect. For AM0 light illumination, the change in the electrical properties of the 3J solar cells under AM0 illumination was investigated at 175 K. The electrical performance does not change by the illumination for 370 min. On the other hand, by current injection at 155 K, a significant recovery of the electrical performance of proton-irradiated 3J solar cells is observed. At current injection times of 4,500 sec, a 10 percent recovery of Isc and Voc to the values after irradiation for the fluence of 3 x 10(exp 13)/sq cm is observed.; 資料番号: AA0049054018; レポート番号: JAXA-SP-05-008
• Access Restrictions: 限定公開
• Periodical Title (NCID): AA11984031; https://ci.nii.ac.jp/ncid/AA11984031
• Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ