I[lc]n(sub 0.3)G[lc]a(sub 0.7)A[lc]s seed crystal preparation using the multi-component zone melting method

• 資料種別: 文書・図像類
• タイトル: I[lc]n(sub 0.3)G[lc]a(sub 0.7)A[lc]s seed crystal preparation using the multi-component zone melting method
• 著者・編者: 児玉, 茂夫; 木下, 恭一; 花上, 康宏; 依田, 真一; Kodama, Shigeo; Kinoshita, Kyoichi; Hanaue, Yasuhiro; Yoda, Shinichi
• 著者標目: 児玉, 茂夫; 木下, 恭一; 花上, 康宏; 依田, 真一; Kodama, Shigeo; Kinoshita, Kyoichi; Hanaue, Yasuhiro; Yoda, Shinichi
• 出版事項: 宇宙開発事業団
• 出版年月日等: 2001-12-25
• 出版年（W3CDTF）: 2001-12-25
• 並列タイトル等: 多成分ゾーン溶融法を用いたIn(sub 0.3)Ga(sub 0.7)As種結晶の調製
• タイトル（掲載誌）: 宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals
• 掲載ページ: 59-64
• ISSN（掲載誌）: ISSN : 1345-7888
• 本文の言語コード: eng
• 件名標目: ゾーン溶融法; 種; 結晶過程; In(sub x)Ga(sub 1-x)As; 短結晶; 温度勾配; 基板; 均質性; zone melting method; seed; crystallization; In(sub x)Ga(sub 1 minus x)As; single crystal; temperature gradient; substrate; homogeneity
• 対象利用者: 一般
• 一般注記: In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method is currently under way for space experiments. In a sample configuration with an InAs crystal sandwiched between GaAs seed and feed crystals, the x-value of growing In(x)Ga(1-x)As crystal was increased from 0.04 to 0.3 before being maintained at 0.3 for several millimeters of growth. Efforts to increase the single crystalline growth yield have been carried out this year. The appearance of poly-crystallization in the initial stages, during the stage of increasing InAs composition, and during the constant-composition growth stage were studied. Measures were taken to prevent poly-crystalline growth. The yield of single-crystalline structures was thus increased from 0.05 to 0.5. These improved conditions of growth have been used to prepare ten seed crystals for ground experiments.; 資料番号: AA0032602005; レポート番号: NASDA-TMR-010016E
• 一次資料へのリンクURL: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42548&item_no=1&attribute_id=31&file_no=1
• オンライン閲覧公開範囲: 限定公開
• 連携機関・データベース: 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• 提供元機関・データベース: 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ