I[lc]n(sub 0.3)G[lc]a(sub 0.7)A[lc]s seed crystal preparation using the multi-component zone melting method

Material type: 文書・図像類

Author: 児玉, 茂夫ほか

Publisher: 宇宙開発事業団

Publication date: 2001-12-25

Material Format: Digital

Capacity, size, etc.: -

NDC: -

View All

Notes on use

Note (General)：: In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method is currently under way for space experiments. In a sample conf...

Search by Bookstore

Holdings of Libraries in Japan

This page shows libraries in Japan other than the National Diet Library that hold the material.

List of Cooperating Institutions and Databases

Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.

other

JAXA Repository
Digital
You can check the holdings of institutions and databases with which 学術機関リポジトリデータベース（IRDB）（機関リポジトリ） is linked at the site of 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）.
JAXA Repository

Search by Bookstore

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Digital

Material Type: 文書・図像類
Title: I[lc]n(sub 0.3)G[lc]a(sub 0.7)A[lc]s seed crystal preparation using the multi-component zone melting method
Author/Editor: 児玉, 茂夫
木下, 恭一
花上, 康宏
依田, 真一
Kodama, Shigeo
Kinoshita, Kyoichi
Hanaue, Yasuhiro
Yoda, Shinichi
Author Heading: 児玉, 茂夫
木下, 恭一
花上, 康宏
依田, 真一
Kodama, Shigeo
Kinoshita, Kyoichi
Hanaue, Yasuhiro
Yoda, Shinichi
Publication, Distribution, etc.: 宇宙開発事業団
Publication Date: 2001-12-25
Publication Date (W3CDTF): 2001-12-25
Alternative Title: 多成分ゾーン溶融法を用いたIn(sub 0.3)Ga(sub 0.7)As種結晶の調製
Periodical title: 宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals
Pages: 59-64
ISSN (Periodical Title): ISSN : 1345-7888
Text Language Code: eng
Subject Heading: ゾーン溶融法
種
結晶過程
In(sub x)Ga(sub 1-x)As
短結晶
温度勾配
基板
均質性
zone melting method
seed
crystallization
In(sub x)Ga(sub 1 minus x)As
single crystal
temperature gradient
substrate
homogeneity
Target Audience: 一般
Note (General): In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method is currently under way for space experiments. In a sample configuration with an InAs crystal sandwiched between GaAs seed and feed crystals, the x-value of growing In(x)Ga(1-x)As crystal was increased from 0.04 to 0.3 before being maintained at 0.3 for several millimeters of growth. Efforts to increase the single crystalline growth yield have been carried out this year. The appearance of poly-crystallization in the initial stages, during the stage of increasing InAs composition, and during the constant-composition growth stage were studied. Measures were taken to prevent poly-crystalline growth. The yield of single-crystalline structures was thus increased from 0.05 to 0.5. These improved conditions of growth have been used to prepare ten seed crystals for ground experiments.
資料番号: AA0032602005
レポート番号: NASDA-TMR-010016E
Source: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42548&item_no=1&attribute_id=31&file_no=1
https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42548&item_no=1&attribute_id=31&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ