Numerical analysis of crystal growth of an I[lc]nA[lc]s-G[lc]aA[lc]s binary semiconductor under microgravity conditions

• 資料種別: 文書・図像類
• タイトル: Numerical analysis of crystal growth of an I[lc]nA[lc]s-G[lc]aA[lc]s binary semiconductor under microgravity conditions
• 著者・編者: 前川, 透; 杉木, 喜洋; 松本, 聡; Maekawa, Toru; Sugiki, Yoshihiro; Matsumoto, Satoshi
• 著者標目: 前川, 透; 杉木, 喜洋; 松本, 聡; Maekawa, Toru; Sugiki, Yoshihiro; Matsumoto, Satoshi
• 出版事項: 宇宙開発事業団
• 出版年月日等: 2002-12-27
• 出版年（W3CDTF）: 2002-12-27
• 並列タイトル等: 微小重力条件下でのInAs-GaAs2成分系半導体の結晶成長の数値解析
• タイトル（掲載誌）: 宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystals
• 掲載ページ: 19-28
• ISSN（掲載誌）: ISSN : 1345-7888
• 本文の言語コード: eng
• 件名標目: 結晶成長; 半導体材料; 砒化ガリウム; 砒化インジウム; 数値解析; 移動液相線ゾーン; 微小重力; Boussinesq近似; 結晶・溶液界面; crystal growth; semiconductor material; indium arsenide; gallium arsenide; numerical analysis; traveling liquidus zone; microgravity; Boussinesq approximation; crystal-solution interface
• 対象利用者: 一般
• 一般注記: The crystal growth process of an InAs-GaAs binary semiconductor is investigated by the Traveling Liquidus Zone (TLZ) method numerically and the possibility of growing a bulk In(0.3)Ga(0.7)As crystal is discussed. First this new crystal growth technique is reviewed and then a numerical model and calculation method of the growth of binary crystals are explained. It is focused on the effect of the solution zone width on the crystal growth process and the generation of supercooling in the solution in order to grow In0.3Ga0.7As. It is found that a uniform In(0.3)Ga(0.7)As can be grown by the TLZ method under 1 microgram conditions by adjusting the solution zone width and the temperature gradient in the solution at appropriate values.; 資料番号: AA0045402002; レポート番号: NASDA-TMR-020024E
• 一次資料へのリンクURL: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42841&item_no=1&attribute_id=31&file_no=1
• オンライン閲覧公開範囲: 限定公開
• 連携機関・データベース: 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• 提供元機関・データベース: 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ