Numerical analysis of crystal growth of an I[lc]nA[lc]s-G[lc]aA[lc]s binary semiconductor under microgravity conditions

Material type: 文書・図像類

Author: 前川, 透ほか

Publisher: 宇宙開発事業団

Publication date: 2002-12-27

Material Format: Digital

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Note (General)：: The crystal growth process of an InAs-GaAs binary semiconductor is investigated by the Traveling Liquidus Zone (TLZ) method numerically and the possib...

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Material Type: 文書・図像類
Title: Numerical analysis of crystal growth of an I[lc]nA[lc]s-G[lc]aA[lc]s binary semiconductor under microgravity conditions
Author/Editor: 前川, 透
杉木, 喜洋
松本, 聡
Maekawa, Toru
Sugiki, Yoshihiro
Matsumoto, Satoshi
Author Heading: 前川, 透
杉木, 喜洋
松本, 聡
Maekawa, Toru
Sugiki, Yoshihiro
Matsumoto, Satoshi
Publication, Distribution, etc.: 宇宙開発事業団
Publication Date: 2002-12-27
Publication Date (W3CDTF): 2002-12-27
Alternative Title: 微小重力条件下でのInAs-GaAs2成分系半導体の結晶成長の数値解析
Periodical title: 宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystals
Pages: 19-28
ISSN (Periodical Title): ISSN : 1345-7888
Text Language Code: eng
Subject Heading: 結晶成長
半導体材料
砒化ガリウム
砒化インジウム
数値解析
移動液相線ゾーン
微小重力
Boussinesq近似
結晶・溶液界面
crystal growth
semiconductor material
indium arsenide
gallium arsenide
numerical analysis
traveling liquidus zone
microgravity
Boussinesq approximation
crystal-solution interface
Target Audience: 一般
Note (General): The crystal growth process of an InAs-GaAs binary semiconductor is investigated by the Traveling Liquidus Zone (TLZ) method numerically and the possibility of growing a bulk In(0.3)Ga(0.7)As crystal is discussed. First this new crystal growth technique is reviewed and then a numerical model and calculation method of the growth of binary crystals are explained. It is focused on the effect of the solution zone width on the crystal growth process and the generation of supercooling in the solution in order to grow In0.3Ga0.7As. It is found that a uniform In(0.3)Ga(0.7)As can be grown by the TLZ method under 1 microgram conditions by adjusting the solution zone width and the temperature gradient in the solution at appropriate values.
資料番号: AA0045402002
レポート番号: NASDA-TMR-020024E
Access Restrictions: 限定公開
Periodical Title (NCID): AN00364784
https://ci.nii.ac.jp/ncid/AN00364784
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ