Verification of homogeneous In(x)Ga(1-x)As crystal growth by the TLZ (Traveling Liquidus-Zone) method

• 資料種別: 文書・図像類
• タイトル: Verification of homogeneous In(x)Ga(1-x)As crystal growth by the TLZ (Traveling Liquidus-Zone) method
• 著者・編者: 鶴, 哲也; 岩井, 正行; 村松, 祐治; 木下, 恭一; 緒方, 康行; 足立, 聡; 越川, 尚清; 依田, 真一; Tsuru, Tetsuya; Iwai, Masayuki; Muramatsu, Yuji; Kinoshita, Kyoichi; Ogata, Yasuyuki; Adachi, Satoshi; Koshikawa, Naokiyo; Yoda, Shinichi
• 著者標目: 鶴, 哲也; 岩井, 正行; 村松, 祐治; 木下, 恭一; 緒方, 康行; 足立, 聡; 越川, 尚清; 依田, 真一; Tsuru, Tetsuya; Iwai, Masayuki; Muramatsu, Yuji; Kinoshita, Kyoichi; Ogata, Yasuyuki; Adachi, Satoshi; Koshikawa, Naokiyo; Yoda, Shinichi
• 出版事項: 宇宙開発事業団
• 出版年月日等: 2003-08-29
• 出版年（W3CDTF）: 2003-08-29
• 並列タイトル等: 飽和溶融帯移動法(TLZ法)による均質なIn(x)Ga(1-x)As結晶成長の証明
• タイトル（掲載誌）: 宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals
• 掲載ページ: 11-18
• ISSN（掲載誌）: ISSN : 1345-7888
• 本文の言語コード: eng
• 件名標目: TLZ法; 結晶成長; In(x)Ga(1-x)As; 温度勾配; 濃度; 均一性; モデル; 並進運動; TLZ method; crystal growth; temperature gradient; concentration; homogeneity; model; translational motion
• 対象利用者: 一般
• 一般注記: The TLZ (Traveling Liquidus-Zone) method has been invented as a new crystal growth method, which enables growing compositionally homogeneous mixed crystals of In(x)Ga(1-x)As (X:0.3). In this study, examined was the relation between sample translation rates and compositions of grown crystals, and the TLZ growth model was verified. In addition, the effects of temperature gradient were examined. The growth of a long homogeneous crystal was tried. As a result, a homogeneous crystal was obtained at the sample translation rate in accordance with that calculated from the TLZ growth model. It was not successful to grow homogeneous crystals at other sample translation rates. Also succeeded was a homogeneous crystal growth at another temperature gradient, and a 60 mm long homogeneous crystal longer than those crystals was obtained so far. It was thus verified that the TLZ growth model can be applied to the real crystal growth, and accuracy of the model prediction was confirmed.; 資料番号: AA0046981001; レポート番号: NASDA-TMR-030006E
• 一次資料へのリンクURL: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42957&item_no=1&attribute_id=31&file_no=1
• オンライン閲覧公開範囲: 限定公開
• 連携機関・データベース: 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• 提供元機関・データベース: 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ