Verification of homogeneous In(x)Ga(1-x)As crystal growth by the TLZ (Traveling Liquidus-Zone) method

Material type: 文書・図像類

Author: 鶴, 哲也ほか

Publisher: 宇宙開発事業団

Publication date: 2003-08-29

Material Format: Digital

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Note (General)：: The TLZ (Traveling Liquidus-Zone) method has been invented as a new crystal growth method, which enables growing compositionally homogeneous mixed cry...

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Material Type: 文書・図像類
Title: Verification of homogeneous In(x)Ga(1-x)As crystal growth by the TLZ (Traveling Liquidus-Zone) method
Author/Editor: 鶴, 哲也
岩井, 正行
村松, 祐治
木下, 恭一
緒方, 康行
足立, 聡
越川, 尚清
依田, 真一
Tsuru, Tetsuya
Iwai, Masayuki
Muramatsu, Yuji
Kinoshita, Kyoichi
Ogata, Yasuyuki
Adachi, Satoshi
Koshikawa, Naokiyo
Yoda, Shinichi
Author Heading: 鶴, 哲也
岩井, 正行
村松, 祐治
木下, 恭一
緒方, 康行
足立, 聡
越川, 尚清
依田, 真一
Tsuru, Tetsuya
Iwai, Masayuki
Muramatsu, Yuji
Kinoshita, Kyoichi
Ogata, Yasuyuki
Adachi, Satoshi
Koshikawa, Naokiyo
Yoda, Shinichi
Publication, Distribution, etc.: 宇宙開発事業団
Publication Date: 2003-08-29
Publication Date (W3CDTF): 2003-08-29
Alternative Title: 飽和溶融帯移動法(TLZ法)による均質なIn(x)Ga(1-x)As結晶成長の証明
Periodical title: 宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals
Pages: 11-18
ISSN (Periodical Title): ISSN : 1345-7888
Text Language Code: eng
Subject Heading: TLZ法
結晶成長
In(x)Ga(1-x)As
温度勾配
濃度
均一性
モデル
並進運動
TLZ method
crystal growth
temperature gradient
concentration
homogeneity
model
translational motion
Target Audience: 一般
Note (General): The TLZ (Traveling Liquidus-Zone) method has been invented as a new crystal growth method, which enables growing compositionally homogeneous mixed crystals of In(x)Ga(1-x)As (X:0.3). In this study, examined was the relation between sample translation rates and compositions of grown crystals, and the TLZ growth model was verified. In addition, the effects of temperature gradient were examined. The growth of a long homogeneous crystal was tried. As a result, a homogeneous crystal was obtained at the sample translation rate in accordance with that calculated from the TLZ growth model. It was not successful to grow homogeneous crystals at other sample translation rates. Also succeeded was a homogeneous crystal growth at another temperature gradient, and a 60 mm long homogeneous crystal longer than those crystals was obtained so far. It was thus verified that the TLZ growth model can be applied to the real crystal growth, and accuracy of the model prediction was confirmed.
資料番号: AA0046981001
レポート番号: NASDA-TMR-030006E
Source: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42957&item_no=1&attribute_id=31&file_no=1
https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42957&item_no=1&attribute_id=31&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ