並列タイトル等SiC ウェハ ナイブ ノ パルス レーザ ショウシャコン ノ カンサツ
Trial study of SiC dicing induced by laser
タイトル(掲載誌)総合技術研究所研究報告=Bulletin of Research Institute for Industrial Technology.
一般注記SiC is well known as hard-to-process material. High-speed and low-cost slicing and dicing technology became urgent need in power semiconductor industries. Laser abrasion technology has been developed because it is a dry and non-contact process. However,it also has demerit of debris pollution and thermal damage that leads to degradation of semiconductor device properties. In order to resolve these requirements,we tried to cleave SiC wafier by pulse laser irradiation. The sample surface and the internal structure after the laser irradiation was observed with a microscope.
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/3136
一次資料へのリンクURLhttp://repository.aitech.ac.jp/dspace/bitstream/11133/3136/1/%e7%b7%8f%e7%a0%9418%e5%8f%b7%28p37-p41%29.pdf
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)