SiCウェハ内部のパルスレーザ照射痕の観察

Material type: 文書・図像類

Author: 岩田, 博之ほか

Publisher: 愛知工業大学

Publication date: 2016-09-23

Material Format: Digital

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Note (General)：: SiC is well known as hard-to-process material. High-speed and low-cost slicing and dicing technology became urgent need in power semiconductor industr...

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Material Type: 文書・図像類
Title: SiCウェハ内部のパルスレーザ照射痕の観察
Author/Editor: 岩田, 博之
河口, 大祐
坂, 公恭
Author Heading: 岩田, 博之
河口, 大祐
坂, 公恭
Publication, Distribution, etc.: 愛知工業大学
Publication Date: 2016-09-23
Publication Date (W3CDTF): 2016-09-23
Alternative Title: SiC ウェハナイブノパルスレーザショウシャコンノカンサツ
Trial study of SiC dicing induced by laser
Periodical title: 総合技術研究所研究報告=Bulletin of Research Institute for Industrial Technology.
No. or year of volume/issue: 18
Volume: 18
Pages: 37-41
ISSN (Periodical Title): ISSN : 1344-9672
Text Language Code: jpn
Target Audience: 一般
Note (General): SiC is well known as hard-to-process material. High-speed and low-cost slicing and dicing technology became urgent need in power semiconductor industries. Laser abrasion technology has been developed because it is a dry and non-contact process. However，it also has demerit of debris pollution and thermal damage that leads to degradation of semiconductor device properties. In order to resolve these requirements，we tried to cleave SiC wafier by pulse laser irradiation. The sample surface and the internal structure after the laser irradiation was observed with a microscope.
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/3136
Format (IMT): application/pdf
Source: http://repository.aitech.ac.jp/dspace/bitstream/11133/3136/1/%e7%b7%8f%e7%a0%9418%e5%8f%b7%28p37-p41%29.pdf
http://repository.aitech.ac.jp/dspace/bitstream/11133/3136/1/%e7%b7%8f%e7%a0%9418%e5%8f%b7%28p37-p41%29.pdf
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 愛知工業大学 : 愛知工業大学学術情報リポジトリ