Journal of photopolymer science and technology

• 資料種別: 雑誌
• ISSN: 0914-9244
• ISSN-L: 0914-9244
• タイトル: Journal of photopolymer science and technology
• 巻次・部編番号: 18(1)-18(6):2005
• 著者標目: フォトポリマー学会 フォトポリマー ガッカイ ( 001142273 )典拠; Conference of Photopolymer Science and Technology ( 01236612 )典拠; フォトポリマー懇話会 フォトポリマー コンワカイ ( 00283295 )典拠
• 出版事項: Chiba : The Society of Photopolymer Science and Technology
• 出版年月日等: 2005
• 出版年（W3CDTF）: 2005
• 出版表示等に関する注記: Place of publication varies; Publisher: Technical Association of Photopolymers, Japan (v. 6, no. 1-v. 23, no. 6); The Conference of Photopolymer Science and Technology (v. 24, no. 1-v. 25, no. 6)
• 刊行巻次・年月次: v. 6, no. 1 (1993)-
• 大きさ: 29cm
• 出版地（国名コード）: JP
• 本文の言語コード: eng
• NDLC: ZP48
• 一般注記: Description based on the latest issue; Frequency varies
• 所蔵機関: 国立国会図書館
• 請求記号: Z53-W515
• 関連情報: 区分換; https://ndlsearch.ndl.go.jp/books/R100000002-I000000065969
• 連携機関・データベース: 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• 書誌ID（NDLBibID）: 000000156586; http://id.ndl.go.jp/bib/000000156586
• 全国書誌番号: 10050993
• 目録規則: 国立国会図書館逐次刊行物目録規則
• 整理区分コード: 132

目次

The Photopolymer Science and Technology Award

Photosensitive Column Spacer Materials for Liquid Crystal Display Panels

Photoalignment Control of Liquid Crystals on Photo-Cross-Linkable Polymer Liquid Crystal Film

Control of Liquid Crystal Alignment on Crosslinkable Polymer Surfaces with Photo and Plasma Modification

Influence of Polymer Wall Formation on Alignment Behaviors of Ferroelectric Liquid Crystal Devices

Characterization of t-Butoxycarbonyloxy-containing Polymer(2)Development and Evaluation of the Binary Hologram Master

Removal of Positive-tone Diazonaphthoquinone/Novolak Resist Using UV Laser lrradiation

Control Photo and Thermal Decomposition of Diazo/PVA and Diazo/PVAc Resist with Inclusion Compounds

Morphological Control of Deposits from a Gaseous Mixture of Allyltrimethylsilane and Iron Pentacarbonyl

Multi-Functional Methacrylates Bearing Thermal Degradation Properties--Synthesis, Photo- and Thermal Curing, and Thermolysis

Possible Origins and Some Methods to Minimize LER

Line Edge Roughness in Chemically Amplified Resist: Speculation, Simulation and Application

The Impact of Fluoropolymers on Line Edge Roughness in 193 nm Imaging

Basic Aspects of Acid Generation Process in Chemically Amplified Electron Beam Resist

Outgassing Analysis in EUV Resist

Innovative Process and Material for sub-80nm Lithography (M+ Process)

Condensation Behavior of Nanoscale Bubbles on ArF Excimer Resist Surface Analyzed by Atomic Force Microscope

Characterization and Lithographic Performance of Silsesquioxane 193 nm Bilayer Resists

High Etch-Resistant Silicon Containing Bilayer Resist: Lithographic Performance & Outgassing Studies

Interaction Analysis of DI-water/Air/ArF Resist System using Atomic Force Microscope

Novolak Resist Removal Using Laser(266/532nm)

Visible-Light-Sensitive Photo-Acid Generator Incorporating Food Dye for Use in Chemically Amplified Resists

Polymer Complex Formation between Poly(vinylpyridines) and Poly(acrylic acid) and the Effects of UV-irradiation

Rheological Properties of UV-curable Flexographic Ink(2)Influence of Interfacial Interactions in Relation to Rheological Variables of Ink and its Printability

Transient Absorption Spectra of Electron Beam Sensitive Polyimides and their Model Compounds

Some Issues in the Mechanical Forming of Nanoimprint Structures

Fabrication of Multi-bit Crossbar Circuits at Sub-50 nm Half-pitch by Using UV-based Nanoimprint Lithography

Opportunities and Challenges in Immersion Lithography

Optical Lithography for the 32nm node

Numerical Investigations on Requirements for BARK Materials for Hyper NA Immersion Lithography