Applied physics express : APEX

• 資料種別: 雑誌
• ISSN: 1882-0778
• ISSN-L: 1882-0778
• タイトル: Applied physics express : APEX
• 巻次・部編番号: 6(5)-6(8):2013.5-2013.8
• 著者標目: 応用物理学会 オウヨウ ブツリ ガッカイ ( 00281497 )典拠
• 出版事項: Tokyo : Japan Society of Applied Physics
• 出版年月日等: 2013
• 出版年（W3CDTF）: 2013
• 刊行巻次・年月次: v. 1, no. 1 (Jan. 2008)-
• 大きさ: 30cm
• 出版地（国名コード）: JP
• 本文の言語コード: eng
• NDLC: ZM35
• 所蔵機関: 国立国会図書館
• 請求記号: Z78-A526
• 関連情報: 関連資料; https://ndlsearch.ndl.go.jp/books/R100000002-I000004245159; 区分換; https://ndlsearch.ndl.go.jp/books/R100000002-I025350370
• 連携機関・データベース: 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• 書誌ID（NDLBibID）: 000008533915; http://id.ndl.go.jp/bib/000008533915
• 全国書誌番号: 01018033
• 目録規則: 日本目録規則1987年版改訂版
• 整理区分コード: 132

目次

Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier

Deep Levels Generated by Thermal Oxidation in n-Type 4H-SiC

Reduction in Interface Trap Density of Al₂O₃/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

Influence of Femtosecond Laser Pulse Number on Spike Geometry of Microstructured Silicon

Piezoelectric Vibrational Energy Harvester Using Lead-Free Ferroelectric BiFeO₃ Films

Free-Standing GaN Layer by Combination of Electrochemical and Photo-Electrochemical Etching

Inclined Dislocation Generation in Compressive-Strain-Enhanced Mg-Doped GaN/Al₀.₁₅Ga₀.₈₅N Superlattice with AlN Interlayer

Epitaxial Growth of Ⅲ-Nitride/Graphene Heterostructures for Electronic Devices

Spectral and Spatial Luminescence Distribution of m-Plane ZnO Epitaxial Films Containing Stacking Faults : A Cathodoluminescence Study

Theoretical Photovoltaic Conversion Efficiencies of ZnSnP₂, CdSnP₂, and Zn₁₋xCd[x]SnP₂ Alloys

Influence of GaN Barrier Thickness on Optical Properties of In-Graded InGaN/GaN Multiple Quantum Wells

Strong Mid-Infrared Absorption and High Crystallinity of Microstructured Silicon Formed by Femtosecond Laser Irradiation in NF₃ Atmosphere

Uniaxially Strained Silicon on Insulator with Wafer Level Prepared by Mechanical Bending and Annealing

Formation of Si₂N₂O Microcrystalline Precipitates near the Quartz Crucible Wall Coated with Silicon Nitride in Cast-Grown Silicon

Novel Display Mode Using Dielectric Response of Antiferroelectric Liquid Crystals

Valence-Band Offset of m-Plane GaN(1100) Films Grown on LiAlO₂(100) Substrates

Precise Determination of the Direct-Indirect Band Gap Energy Crossover Composition in Al[x]Ga₁₋xAs

Electronic Structure and Mobility of Alkylated and Nonalkylated Organic Semiconductors : Role of van der Waals Interactions

Refractive-Index-Based Sorting of Colloidal Particles Using a Subwavelength Optical Fiber in a Static Fluid

Eu²⁺-Activated CaSrSiO₄ : a New Red-Emitting Oxide Phosphor for White-Light-Emitting Diodes