Applied physics express : APEX

• Material Type: 雑誌
• ISSN: 1882-0778
• ISSN-L: 1882-0778
• Title: Applied physics express : APEX
• Volume: 6(5)-6(8):2013.5-2013.8
• Author Heading: 応用物理学会 オウヨウ ブツリ ガッカイ ( 00281497 )Authorities
• Publication, Distribution, etc.: Tokyo : Japan Society of Applied Physics
• Publication Date: 2013
• Publication Date (W3CDTF): 2013
• Year and volume of publication: v. 1, no. 1 (Jan. 2008)-
• Size: 30cm
• Place of Publication (Country Code): JP
• Text Language Code: eng
• NDLC: ZM35
• Holding library: 国立国会図書館
• Call No.: Z78-A526
• Related Material: 関連資料; https://ndlsearch.ndl.go.jp/books/R100000002-I000004245159; 区分換; https://ndlsearch.ndl.go.jp/books/R100000002-I025350370
• Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• Bibliographic ID (NDL): 000008533915; http://id.ndl.go.jp/bib/000008533915
• National Bibliography No. (JPNO): 01018033
• Cataloging Rule: Nippon Cataloguing Rules 1987 Revised Edition
• Bibliographic Record Category (NDL): 132

Table of Contents

Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier

Deep Levels Generated by Thermal Oxidation in n-Type 4H-SiC

Reduction in Interface Trap Density of Al₂O₃/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

Influence of Femtosecond Laser Pulse Number on Spike Geometry of Microstructured Silicon

Piezoelectric Vibrational Energy Harvester Using Lead-Free Ferroelectric BiFeO₃ Films

Free-Standing GaN Layer by Combination of Electrochemical and Photo-Electrochemical Etching

Inclined Dislocation Generation in Compressive-Strain-Enhanced Mg-Doped GaN/Al₀.₁₅Ga₀.₈₅N Superlattice with AlN Interlayer

Epitaxial Growth of Ⅲ-Nitride/Graphene Heterostructures for Electronic Devices

Spectral and Spatial Luminescence Distribution of m-Plane ZnO Epitaxial Films Containing Stacking Faults : A Cathodoluminescence Study

Theoretical Photovoltaic Conversion Efficiencies of ZnSnP₂, CdSnP₂, and Zn₁₋xCd[x]SnP₂ Alloys

Influence of GaN Barrier Thickness on Optical Properties of In-Graded InGaN/GaN Multiple Quantum Wells

Strong Mid-Infrared Absorption and High Crystallinity of Microstructured Silicon Formed by Femtosecond Laser Irradiation in NF₃ Atmosphere

Uniaxially Strained Silicon on Insulator with Wafer Level Prepared by Mechanical Bending and Annealing

Formation of Si₂N₂O Microcrystalline Precipitates near the Quartz Crucible Wall Coated with Silicon Nitride in Cast-Grown Silicon

Novel Display Mode Using Dielectric Response of Antiferroelectric Liquid Crystals

Valence-Band Offset of m-Plane GaN(1100) Films Grown on LiAlO₂(100) Substrates

Precise Determination of the Direct-Indirect Band Gap Energy Crossover Composition in Al[x]Ga₁₋xAs

Electronic Structure and Mobility of Alkylated and Nonalkylated Organic Semiconductors : Role of van der Waals Interactions

Refractive-Index-Based Sorting of Colloidal Particles Using a Subwavelength Optical Fiber in a Static Fluid

Eu²⁺-Activated CaSrSiO₄ : a New Red-Emitting Oxide Phosphor for White-Light-Emitting Diodes