Advanced gate stack, source/drain, and channel engineering for Si-based CMOS 5: new materials, processes, and equipment. : international symposium on advanced gate stack, source/drain and channel engineering for Si-based CMOS: new materials, processes and equipment, 5 : 215th meeting of the Electrochemical Society : May 2009, San Frabcisco, CA.

• 資料種別: 図書
• ISBN: 9781566777094 (Hardcover); 9781607680598 (PDF)
• ISSN: 1938-6737 (online)
• ISSN（シリーズ）: 1938-5862 (print)
• タイトル: Advanced gate stack, source/drain, and channel engineering for Si-based CMOS 5: new materials, processes, and equipment. : international symposium on advanced gate stack, source/drain and channel engineering for Si-based CMOS: new materials, processes and equipment, 5 : 215th meeting of the Electrochemical Society : May 2009, San Frabcisco, CA.
• シリーズタイトル: ECS Transactions ; 19 (no. 1)
• タイトル標目: ECS transactions ; v. 19, no. 1.
• 著者標目: Narayanan, V. (Vijay); Electrochemical Society. Meeting (215th : 2009 : San Francisco, Calif.); International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS (2009 : San Francisco, Calif.)
• 出版事項: Pennington : Electrochemical Society
• 出版年月日等: c2009.
• 出版年（W3CDTF）: 2009
• 数量: ix, 353 p. : ill. ; 23 cm.
• 並列タイトル等: Dielectric and semiconductor materials, devices, and processing
• 出版地（国名コード）: US
• 本文の言語コード: eng
• 件名標目: Metal oxide semiconductors, Complementary -- Congresses.; Metal oxide semiconductors -- Materials -- Congresses.; Gate array circuits -- Materials -- Congresses.
• NDLC: M17
• 一般注記: Papers.; "The main objective of this annual symposium is (...) " -- pref.
• 書誌注記: Includes bibliographical references and author index.
• 所蔵機関: 国立国会図書館
• 請求記号: M17-10-1506
• 連携機関・データベース: 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• 書誌ID（NDLBibID）: 000010628294; http://id.ndl.go.jp/bib/000010628294
• OCLC番号: 495187983; https://www.worldcat.org/oclc/495187983
• 整理区分コード: 215