Advanced gate stack, source/drain, and channel engineering for Si-based CMOS 5: new materials, processes, and equipment. : international symposium on advanced gate stack, source/drain and channel engineering for Si-based CMOS: new materials, processes and equipment, 5 : 215th meeting of the Electrochemical Society : May 2009, San Frabcisco, CA. (ECS Transactions ; 19 (no. 1))

Advanced gate stack, source/drain, and channel engineering for Si-based CMOS 5: new materials, processes, and equipment. : international symposium on advanced gate stack, source/drain and channel engineering for Si-based CMOS: new materials, processes and equipment, 5 : 215th meeting of the Electrochemical Society : May 2009, San Frabcisco, CA.

(ECS Transactions ; 19 (no. 1))

Call No. (NDL): M17-10-1506
Bibliographic ID of National Diet Library: 000010628294

Material type: 図書

Author: Narayanan, V. (Vijay)ほか

Publisher: Electrochemical Society

Publication date: c2009.

Material Format: Paper

Capacity, size, etc.: ix, 353 p. : ill. ; 23 cm.

NDC: -

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Note (General)：: Papers."The main objective of this annual symposium is (...) " -- pref.

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Paper

Material Type: 図書
ISBN: 9781566777094 (Hardcover)
9781607680598 (PDF)
ISSN: 1938-6737 (online)
ISSN (series): 1938-5862 (print)
Title: Advanced gate stack, source/drain, and channel engineering for Si-based CMOS 5: new materials, processes, and equipment. : international symposium on advanced gate stack, source/drain and channel engineering for Si-based CMOS: new materials, processes and equipment, 5 : 215th meeting of the Electrochemical Society : May 2009, San Frabcisco, CA.
Series Title: ECS Transactions ; 19 (no. 1)
Title Heading: ECS transactions ; v. 19, no. 1.
Author Heading: Narayanan, V. (Vijay)
Electrochemical Society. Meeting (215th : 2009 : San Francisco, Calif.)
International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS (2009 : San Francisco, Calif.)
Publication, Distribution, etc.: Pennington : Electrochemical Society
Publication Date: c2009.
Publication Date (W3CDTF): 2009
Extent: ix, 353 p. : ill. ; 23 cm.
Alternative Title: Dielectric and semiconductor materials, devices, and processing
Place of Publication (Country Code): US
Text Language Code: eng
Subject Heading: Metal oxide semiconductors, Complementary -- Congresses.
Metal oxide semiconductors -- Materials -- Congresses.
Gate array circuits -- Materials -- Congresses.
NDLC: M17
Note (General): Papers.
"The main objective of this annual symposium is (...) " -- pref.
Note (Bibliography): Includes bibliographical references and author index.
Holding library: 国立国会図書館
Call No.: M17-10-1506
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000010628294
http://id.ndl.go.jp/bib/000010628294
OCLC No.: 495187983
https://www.worldcat.org/oclc/495187983
Bibliographic Record Category (NDL): 215