Silicon carbide and related materials 2019 : ICSCRM 2019 : selected, peer-reviewed papers from the 18th international conference on silicon carbide and related materials 2019 : (ICSCRM 2019), September 29-October 4, 2019, Kyoto, Japan.

• 資料種別: 図書
• ISBN: 9783035715798 paperback; 3035715793 paperback; 9783035735796 electronic book; 3035735794 electronic book
• ISSN（シリーズ）: 0255-5476
• タイトル: Silicon carbide and related materials 2019 : ICSCRM 2019 : selected, peer-reviewed papers from the 18th international conference on silicon carbide and related materials 2019 : (ICSCRM 2019), September 29-October 4, 2019, Kyoto, Japan.
• シリーズタイトル: Materials Science Forum ; 1004
• タイトル標目: Materials science forum ; v. 1004.
• 著者標目: author. ： International Conference on Silicon Carbide and Related Materials (18th : 2019 : Kyoto, Japan); Yano, Hiroshi.; Ohshima, Takeshi.; Eto, Kazuma.; Harada, Shinsuke.; Mitani, Takeshi.; Tanaka, Yasunori.
• 出版事項: Baech, Switzerland : Trans Tech Publications Ltd (出版)
• 出版年月日等: [2020]
• 出版年（W3CDTF）: 2020
• 数量: xxiv, 1172 pages
• 形態の詳細: illustrations (some color), charts
• 大きさ: 24 cm.
• 並列タイトル等: ICSCRM : Kyoto, Japan 2019; Silicon carbide and related materials 2019 : selected peer-reviewed papers from ICSCRM 2019
• その他のタイトル: Sep 2019, Kyoto, Japan.
• 出版地（国名コード）: CH
• 本文の言語コード: eng
• ジャンル・形式用語: Conference papers and proceedings.
• 表現種別: text
• 機器種別: unmediated
• キャリア種別: volume
• 件名標目: Bipolar Devices.; Characterization.; Crystal Growth.; Diode.; Epitaxial Growth.; Etching.; Extended Defects.; High Temperature Reliability.; Integrated Circuit Packaging.; Layer Growth.; Measurements.; Metal Oxide Semiconductor Field Effect Transistor.; MOS Gate Stack.; Point Defects.; Quantum Technology.; Schottky Barrier.; Silicon Carbide.; Silicon Carbide Power Devices.; Thin Films.; Wafer Machining.; Silicon carbide--Congresses.; Silicon carbide--Electric properties--Congresses.; Silicon-carbide thin films--Congresses.; Nitrides--Congresses.; Graphene--Congresses.; Crystal growth--Congresses.; Wide gap semiconductors--Materials--Congresses.; Wide gap semiconductors--Materials--Technological innovations--Congresses.; Crystal growth.; Graphene.; Nitrides.; Silicon carbide.; Silicon carbide--Electric properties.; Silicon-carbide thin films.
• LCC: TK7871.15.S56
• DDC: 620.1/93
• NDLC: M17
• 対象利用者: 一般
• 一般注記: Selected papers.
• 書誌注記: Includes bibliographical references and indexes.
• 所蔵機関: 国立国会図書館
• 請求記号: M17-21-366
• 連携機関・データベース: 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• 書誌ID（NDLBibID）: 030763403; http://id.ndl.go.jp/bib/030763403
• 目録規則: RDA
• 整理区分コード: 215

• 要約等: This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, ...