Silicon carbide and related materials 2019 : ICSCRM 2019 : selected, peer-reviewed papers from the 18th international conference on silicon carbide and related materials 2019 : (ICSCRM 2019), September 29-October 4, 2019, Kyoto, Japan.

• Material Type: 図書
• ISBN: 9783035715798 paperback; 3035715793 paperback; 9783035735796 electronic book; 3035735794 electronic book
• ISSN (series): 0255-5476
• Title: Silicon carbide and related materials 2019 : ICSCRM 2019 : selected, peer-reviewed papers from the 18th international conference on silicon carbide and related materials 2019 : (ICSCRM 2019), September 29-October 4, 2019, Kyoto, Japan.
• Series Title: Materials Science Forum ; 1004
• Title Heading: Materials science forum ; v. 1004.
• Author Heading: author. ： International Conference on Silicon Carbide and Related Materials (18th : 2019 : Kyoto, Japan); Yano, Hiroshi.; Ohshima, Takeshi.; Eto, Kazuma.; Harada, Shinsuke.; Mitani, Takeshi.; Tanaka, Yasunori.
• Publication, Distribution, etc.: Baech, Switzerland : Trans Tech Publications Ltd (出版)
• Publication Date: [2020]
• Publication Date (W3CDTF): 2020
• Extent: xxiv, 1172 pages
• Other physical details: illustrations (some color), charts
• Size: 24 cm.
• Alternative Title: ICSCRM : Kyoto, Japan 2019; Silicon carbide and related materials 2019 : selected peer-reviewed papers from ICSCRM 2019
• Additional Title: Sep 2019, Kyoto, Japan.
• Place of Publication (Country Code): CH
• Text Language Code: eng
• Genre/Form Terms: Conference papers and proceedings.
• Content Type: text
• Media Type: unmediated
• Carrier Type: volume
• Subject Heading: Bipolar Devices.; Characterization.; Crystal Growth.; Diode.; Epitaxial Growth.; Etching.; Extended Defects.; High Temperature Reliability.; Integrated Circuit Packaging.; Layer Growth.; Measurements.; Metal Oxide Semiconductor Field Effect Transistor.; MOS Gate Stack.; Point Defects.; Quantum Technology.; Schottky Barrier.; Silicon Carbide.; Silicon Carbide Power Devices.; Thin Films.; Wafer Machining.; Silicon carbide--Congresses.; Silicon carbide--Electric properties--Congresses.; Silicon-carbide thin films--Congresses.; Nitrides--Congresses.; Graphene--Congresses.; Crystal growth--Congresses.; Wide gap semiconductors--Materials--Congresses.; Wide gap semiconductors--Materials--Technological innovations--Congresses.; Crystal growth.; Graphene.; Nitrides.; Silicon carbide.; Silicon carbide--Electric properties.; Silicon-carbide thin films.
• LCC: TK7871.15.S56
• DDC: 620.1/93
• NDLC: M17
• Target Audience: 一般
• Note (General): Selected papers.
• Note (Bibliography): Includes bibliographical references and indexes.
• Holding library: 国立国会図書館
• Call No.: M17-21-366
• Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• Bibliographic ID (NDL): 030763403; http://id.ndl.go.jp/bib/030763403
• Cataloging Rule: RDA
• Bibliographic Record Category (NDL): 215

• Summary, etc.: This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, ...