原子層堆積法とTiキャップアニールによる極薄SiO₂換算膜厚を持つhigh-k(k=40)HfO₂ゲートスタックの形成 (特集 ゲートスタック技術の表面・界面科学)
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- Material Type
- 記事
- Author/Editor
- 森田 行則右田 真司水林 亘 他
- Series Title
- Alternative Title
- Extremely Scaled Equivalent Oxide Thickness of High-k (k=40) HfO₂ Gate Stacks Prepared by Atomic Layer Deposition and Ti Cap Anneal
- Periodical title
- 表面科学 = Journal of the Surface Science Society of Japan / 日本表面科学会 編
- No. or year of volume/issue
- 33(11):2012.11
- Volume
- 33
- Issue
- 11