Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

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Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

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Material Type: 記事
Title: Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
Author/Editor: Tomasz Sochacki
Zachary Bryan
Mikolaj Amilusik 他
Author Heading: Tomasz Sochacki
Zachary Bryan
Mikolaj Amilusik
Periodical title: Applied physics express : APEX
No. or year of volume/issue: 6(7):2013.7
Volume: 6
Issue: 7
Pages: 075504-1-4
Publication date of volume/issue (W3CDTF): 2013-07
ISSN (Periodical Title): 1882-0778
ISSN-L (Periodical Title): 1882-0778
Publication (Periodical Title): Tokyo : Japan Society of Applied Physics
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z78-A526
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 024706474
http://id.ndl.go.jp/bib/024706474
Bibliographic Record Category (NDL): 632