Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n⁺/p Diode Achieved by Implantation and Excimer Laser Annealing

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Material Type: 記事
Title: Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n⁺/p Diode Achieved by Implantation and Excimer Laser Annealing
Author/Editor: Chen Wang
Cheng Li
Shihao Huang 他
Author Heading: Chen Wang
Cheng Li
Shihao Huang
Periodical title: Applied physics express : APEX
No. or year of volume/issue: 6(10):2013.10
Volume: 6
Issue: 10
Pages: 106501-1-4
Publication date of volume/issue (W3CDTF): 2013-10
ISSN (Periodical Title): 1882-0778
ISSN-L (Periodical Title): 1882-0778
Publication (Periodical Title): Tokyo : Japan Society of Applied Physics
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z78-A526
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 024954592
http://id.ndl.go.jp/bib/024954592
Bibliographic Record Category (NDL): 632