Applied physics express : APEX

• Material Type: 雑誌
• Title: Applied physics express : APEX
• Volume: 6(9)-6(12):2013.9-2013.12
• Author Heading: 応用物理学会 オウヨウ ブツリ ガッカイ ( 00281497 )Authorities
• Publication, Distribution, etc.: Tokyo : Japan Society of Applied Physics
• Publication Date: 2013
• Publication Date (W3CDTF): 2013
• Year and volume of publication: v. 1, no. 1 (Jan. 2008)-
• Size: 30cm
• ISSN (Periodical Title): 1882-0778
• ISSN-L (Periodical Title): 1882-0778
• Place of Publication (Country Code): JP
• Text Language Code: eng
• NDLC: ZM35
• Holding library: 国立国会図書館
• Call No.: Z78-A526
• Related Material: 関連資料; https://ndlsearch.ndl.go.jp/books/R100000002-I000004245159; 区分換; https://ndlsearch.ndl.go.jp/books/R100000002-I025350370
• Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• Bibliographic ID (NDL): 000008533915; http://id.ndl.go.jp/bib/000008533915
• Cataloging Rule: Nippon Cataloguing Rules 1987 Revised Edition

Table of Contents

Composition-Dependent Band Gap and Band-Edge Bowing in AlInN : A Combined Theoretical and Experimental Study

Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al₀.₀₅Ga₀.₉₅N

Temperature-Dependent Optical Properties of Titanium Oxide Thin Films Studied by Spectroscopic Ellipsometry

Electron Mobility in ZnMgO/ZnO Heterostructures in the Bloch-Gruneisen Regime

Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y₂O₃ and Atomic Layer Deposition of Al₂O₃ : A Comparative Study

Efficient Incorporation of Mg in Solution Grown GaN Crystals

Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure

Nitrogen-Plasma Energetics Effect on Phase Separation of InxGa₁₋xN Nanorods Grown by RF-Plasma Assisted Molecular Beam Epitaxy

InGaN Light-Emitting Diodes on c-Face Sapphire Substrates in Green Gap Spectral Range

Layer-Transferred GaN Template by Ion Cut for Nitride-Based Light-Emitting Diodes

High-Quality AlN Layer Homoepitaxially Grown on Nitrided a-Plane Sapphire Using a Ga-Al Flux

Temperature-Independent Two-Dimensional Hole Gas Confined at GaN/AlGaN Heterointerface

Evaluation of TiN/Cu Gate Metal Scheme for AlGaN/GaN High-Electron-Mobility Transistor Application

Angle-Dependent Resonant Light Absorption of Polariton States in One-Dimensional ZnO Microcavities

Electrode Engineering for Improving Resistance Switching of Sb₂O₅ Films

Low-Temperature Atomic-Layer-Deposited High-κ Dielectric for p-Channel In₀.₇Ga₀.₃As/GaAs₀.₃₅Sb₀.₆₅ Heterojunction Tunneling Field-Effect Transistor

Tensile-Strained GeSn Metal-Oxide-Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy

Convergent-Beam Electron Diffraction Study of the Local Structure of the Tetragonal Phase of PbTiO₃

Defect Structure and Morphology of Alkali Niobate (Na₀.₅K₀.₅)NbO₃ Powder Calcined under Low Oxygen Partial Pressure

Direct Observation of Anisotropic Carrier Transport in Organic Semiconductor by Time-Resolved Microscopic Optical Second-Harmonic Imaging