オペランド硬X線光電...

オペランド硬X線光電子分光法によるSiO₂/4H-SiC界面の界面準位のエネルギー分布観測 (第36回表面科学学術講演会特集号(1))

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オペランド硬X線光電子分光法によるSiO₂/4H-SiC界面の界面準位のエネルギー分布観測(第36回表面科学学術講演会特集号(1))

Call No. (NDL)
Z15-379
Bibliographic ID of National Diet Library
028381757
Material type
記事
Author
山下 良之ほか
Publisher
東京 : 日本表面科学会
Publication date
2017-07
Material Format
Paper
Journal name
表面科学 = Journal of the Surface Science Society of Japan / 日本表面科学会 編 38(7):2017.7
Publication Page
p.347-350
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Paper Digital

Material Type
記事
Author/Editor
山下 良之
蓮沼 隆
長田 貴弘
知京 豊祐
Alternative Title
Direct Observation of the Energy Distribution of Interface States at SiO₂/4H-SiC Interface : Operando Hard X-ray Photoelectron Spectroscopic Study
Periodical title
表面科学 = Journal of the Surface Science Society of Japan / 日本表面科学会 編
No. or year of volume/issue
38(7):2017.7
Volume
38
Issue
7