パワーデバイス用GaN on GaN結晶(特集パワーデバイス用半導体結晶 : Si,SiC,GaN,ダイヤモンド,Ga₂O₃)

Journal name: 電気学会誌 = The journal of the Institute of Electrical Engineers of Japan 137(10):2017.10

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Material Type: 記事
Title: パワーデバイス用GaN on GaN結晶
Author/Editor: 藤倉序章
Series Title: 特集パワーデバイス用半導体結晶 : Si,SiC,GaN,ダイヤモンド,Ga₂O₃
Author Heading: 藤倉序章
Alternative Title: GaN on GaN Crystals for Power Device Applications
Periodical title: 電気学会誌 = The journal of the Institute of Electrical Engineers of Japan
No. or year of volume/issue: 137(10):2017.10
Volume: 137
Issue: 10
Pages: 685-688
Publication date of volume/issue (W3CDTF): 2017-10
ISSN (Periodical Title): 1340-5551
ISSN-L (Periodical Title): 1340-5551
Publication (Periodical Title): 東京 : 電気学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: パワーデバイス
GaN
GaN単結晶基板
NDLC: ZN31
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z16-177
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 028615589
http://id.ndl.go.jp/bib/028615589
Bibliographic Record Category (NDL): 632