バッファ層導入によるサファイア基板上α-Ga₂O₃薄膜の高品質化(特集半導体エレクトロニクス)

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Material Type: 記事
Title: バッファ層導入によるサファイア基板上α-Ga₂O₃薄膜の高品質化
Author/Editor: 金子健太郎
伊藤義人
藤田静雄
Series Title: 特集半導体エレクトロニクス
Author Heading: 金子健太郎
伊藤義人
藤田静雄
Alternative Title: Synthesis of High-Quality α-Ga₂O₃ thin films on Sapphire Substrates with Introduction of Buffer Layers
Periodical title: 材料 / 日本材料学会 [編]
No. or year of volume/issue: 69(10):2020.10
Volume: 69
Issue: 10
Pages: 707-711
Publication date of volume/issue (W3CDTF): 2020-10
ISSN (Periodical Title): 0514-5163
ISSN-L (Periodical Title): 0514-5163
Publication (Periodical Title): 京都 : 日本材料学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: Buffer layer
Gallium oxide
Mist CVD
Corundum
NDLC: ZM16
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z14-267
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 030702892
http://id.ndl.go.jp/bib/030702892
Bibliographic Record Category (NDL): 632