SiC-MOSFET...

SiC-MOSFETを用いたモデル低電圧DC遮断器による限流遮断プロセス : 電源電圧100~400V下での測定 (放電・プラズマ・パルスパワー/開閉保護/高電圧合同研究会・雷および高電圧・開閉保護・放電技術全般)

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SiC-MOSFETを用いたモデル低電圧DC遮断器による限流遮断プロセス : 電源電圧100~400V下での測定

(放電・プラズマ・パルスパワー/開閉保護/高電圧合同研究会・雷および高電圧・開閉保護・放電技術全般)

Call No. (NDL)
Z43-244
Bibliographic ID of National Diet Library
033206071
Material type
記事
Author
長谷川 海渡ほか
Publisher
東京 : 電気学会
Publication date
2023-11-07
Material Format
Paper
Journal name
電気学会研究会資料. SP = The papers of technical meeting on switching and protecting engineering, IEE Japan / 開閉保護研究会 [編] 2023(34-39):2023.11.7
Publication Page
p.19-23
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Paper

Material Type
記事
Author/Editor
長谷川 海渡
横水 康伸
岩田 幹正
兒玉 直人
Alternative Title
Direct Current limitation and interruption with model low-voltage circuit breaker constructed of SiC-MOSFET : Measurement for source voltage of 100 to 400 V
Periodical title
電気学会研究会資料. SP = The papers of technical meeting on switching and protecting engineering, IEE Japan / 開閉保護研究会 [編]
No. or year of volume/issue
2023(34-39):2023.11.7
Volume
2023
Issue
34-39