依頼講演レベル可変ワード線ドライバを用いてプロセスばらつき耐性を向上した40nm CMOSプロセス0.179μm[2]セル2電源SRAM (集積回路)

依頼講演レベル可変ワード線ドライバを用いてプロセスばらつき耐性を向上した40nm CMOSプロセス0.179μm[2]セル2電源SRAM

(集積回路)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 109(2) 2009.4.13・14

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Material Type: 記事
Title: 依頼講演レベル可変ワード線ドライバを用いてプロセスばらつき耐性を向上した40nm CMOSプロセス0.179μm[2]セル2電源SRAM
Author/Editor: 藤村勇樹
平林修
川澄篤他
Series Title: 集積回路
Author Heading: 藤村勇樹
平林修
川澄篤
Alternative Title: A process-variation-tolerant dual-power-supply SRAM with 0.179μm[2] cell in 40nm CMOS using level-programmable wordline driver
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 109(2) 2009.4.13・14
Volume: 109
Issue: 2
Pages: 21～26
Publication date of volume/issue (W3CDTF): 2009-04
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: 高密度SRAM
2電源
ワード線ドライバ
High-Density SRAM
Dual-Power-Supply
Wordline Driver
NDLC: ZN33
Target Audience: 一般
Report No. (Article): ICD2009-5
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 10220129
http://id.ndl.go.jp/bib/10220129
Bibliographic Record Category (NDL): 632