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Reduction of accumulation capacitance in direct-contact HfO2/p-type Si metal-oxide-semiconductor capacitors

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Reduction of accumulation capacitance in direct-contact HfO2/p-type Si metal-oxide-semiconductor capacitors

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
10730448
Material type
記事
Author
Yasuhiro Abeほか
Publisher
Tokyo : The Japan Society of Applied Physics
Publication date
2010-06
Material Format
Digital
Journal name
Japanese journal of applied physics : JJAP 49(6) (1) 2010.6
Publication Page
p.060202-1~3
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Digital

Material Type
記事
Author/Editor
Yasuhiro Abe
Noriyuki Miyata
Hiroshi Nohira 他
Periodical title
Japanese journal of applied physics : JJAP
No. or year of volume/issue
49(6) (1) 2010.6
Volume
49
Issue
6
Other Volume
1
Pages
060202-1~3