Observation of defects that reduce schottky barrier height in 4H-SiC schottky contacts using electrochemical deposition of ZnO

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Observation of defects that reduce schottky barrier height in 4H-SiC schottky contacts using electrochemical deposition of ZnO

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Material Type: 記事
Title: Observation of defects that reduce schottky barrier height in 4H-SiC schottky contacts using electrochemical deposition of ZnO
Author/Editor: Masashi Kato
Hidenori Ono
Masaya Ichimura 他
Author Heading: Masashi Kato
Hidenori Ono
Masaya Ichimura
Periodical title: Japanese journal of applied physics : JJAP
No. or year of volume/issue: 50(3) (1) 2011.3
Volume: 50
Issue: 3
Other Volume: 1
Pages: 036603-1～4
Publication date of volume/issue (W3CDTF): 2011-03
ISSN (Periodical Title): 0021-4922
ISSN-L (Periodical Title): 0021-4922
Publication (Periodical Title): Tokyo : The Japan Society of Applied Physics
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z53-A375
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 11054690
http://id.ndl.go.jp/bib/11054690
Bibliographic Record Category (NDL): 632