Japanese journal of applied physics : JJAP

• Material Type: 雑誌
• ISSN: 0021-4922
• ISSN-L: 0021-4922
• Title: Japanese journal of applied physics : JJAP
• Volume: 50(2)-50(3-2):2011.2-2011.3
• Author Heading: 応用物理学会 オウヨウ ブツリ ガッカイ ( 00281497 )Authorities
• Publication, Distribution, etc.: Tokyo : The Japan Society of Applied Physics
• Publication Date: 2011
• Publication Date (W3CDTF): 2011
• Year and volume of publication: v. 47, no. 1 (Jan. 2008)-
• Size: 30cm
• Place of Publication (Country Code): JP
• Text Language Code: eng
• NDLC: ZM35
• Note (General): Description based on the latest issue; Issued in 2 parts
• Holding library: 国立国会図書館
• Call No.: Z53-A375
• Related Material: 区分換; https://ndlsearch.ndl.go.jp/books/R100000002-I025330922
• Replaces: 継続前; https://ndlsearch.ndl.go.jp/books/R100000002-I000000159719
• Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• Bibliographic ID (NDL): 000009262265; http://id.ndl.go.jp/bib/000009262265
• National Bibliography No. (JPNO): 01018065
• Cataloging Rule: Nippon Cataloguing Rules 1987 Revised Edition
• Bibliographic Record Category (NDL): 132

Table of Contents

Comprehensive review: Present status and future prospects of silicon thin-film solar cells

Inhomogeneous barrier height analysis of (Ni/Au)-InAlGaN/GaN schottky barrier diode

Blueshifting of ion-implanted InGaAs/InGaAsP multiple quantum well structures using two-step rapid temperature annealing process

Terahertz birefringence in zinc oxide

Efficient nonvolatile rewritable memories based on three-dimensionally confined Au quantum dots embedded in ultrathin polyimide layers

Mechanism of oxidation on Si2Sb2Te5 phase change material and its application

Characterization method for the relaxation process of metastable defect states in Cu(In,Ga)Se2 thin films with photoisothermal capacitance transient spectroscopy

Ultrasonic spray-assisted solution-based vapor-deposition of aluminum tris(8-hydroxyquinoline) thin films

Solution flow assisted fabrication method of oriented π-conjugated polymer films by using geometrically-asymmetric sandwich structures

Lateral junction waveguide-type photodiode grown on semi-insulating InP substrate

Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials

Carbon nanotubes, semiconductor nanowires and graphene for thin film transistor and circuit applications (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Minority carrier lifetime measurements by photoinduced carrier microwave absorption method (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Characterization of plasma-irradiated SiO2/Si interface properties by photoinduced-carrier microwave absorption method (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Patterned single-wall carbon nanotube transparent conducting films for liquid crystal switching electrodes (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)