4H-SiC(0001) basal plane stability during the growth of epitaxial graphene on inverted-mesa structures (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)

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4H-SiC(0001) basal plane stability during the growth of epitaxial graphene on inverted-mesa structures

(Selected topics in applied physics: Technology, physics, and modeling of graphene devices)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
11171719
Material type
記事
Author
Shoji Ushioほか
Publisher
Tokyo : The Japan Society of Applied Physics
Publication date
2011-07
Material Format
Paper
Journal name
Japanese journal of applied physics : JJAP 50(7) (1) 2011.7
Publication Page
p.070104-1~5
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Paper

Material Type
記事
Author/Editor
Shoji Ushio
Yasunori Kutsuma
Arata Yoshii 他
Periodical title
Japanese journal of applied physics : JJAP
No. or year of volume/issue
50(7) (1) 2011.7
Volume
50
Issue
7
Other Volume
1